深圳大学学报理工版

制造肖特基型Ni/p-GaN/AlGaN/GaN结构的p-GaN栅极器件,并研究该器件在不同温度与正向偏压下的电致发光现象.当栅极偏压大于4 V时,可以观测到源自p-GaN层的电致发光; 当栅极偏压大于6 V时,可以观测到源自沟道层的氮化镓带边发光; 当温度升高时,电致发光的强度增加.电致发光光谱随偏压及温度的演变过程,揭示了p-GaN栅结构中电子和空穴的非对称性注入过程,以及Ni/p-GaN界面处的热致空穴注入增强效应.研究有助于理解和提高p-GaN栅功率器件的稳定性和可靠性.

In this paper, we fabricate a Shcottky-type Ni/p-GaN/AlGaN/GaN device, and investigate its electroluminescence characteristics under the different forward bias voltages and at different temperatures. We find that when a forward gate bias is greater than 4 V, the electroluminescence comes from the p-GaN layer, indicating that electrons are injected from the channel into the p-GaN layer. While the forward gate bias is higher than 6 V, the GaN band edge emission emerges, indicating that the holes start to be injected into the channel region. As the temperature increases, the intensity of electroluminescence increases significantly, which reveals that the hole injection at the Ni/p-GaN interface is thermally enhanced. This work is essential for comprehensive understanding and improving the stability and reliability of the p-GaN gate power devices.

引言
1 晶圆结构、器件制造及表征
2 不同偏压下的电致发光光谱
3 变温电致发光光谱
4 结语

图1 p-GaN栅结构示意图<br/>Fig.1 (Color online)Schematic cross section of a metal/p-GaN/AlGaN/GaN device

图1 p-GaN栅结构示意图
Fig.1 (Color online)Schematic cross section of a metal/p-GaN/AlGaN/GaN device

图2 正向偏置肖特基型p-GaN栅在室温下的电流电压曲线<br/>Fig.2 Current-voltage curve of the metal/p-GaN/AlGaN/GaN diode under forward bias measured at room temperature

图2 正向偏置肖特基型p-GaN栅在室温下的电流电压曲线
Fig.2 Current-voltage curve of the metal/p-GaN/AlGaN/GaN diode under forward bias measured at room temperature

图3 室温下肖特基型p-GaN栅极在不同正向栅压的电致发光光谱<br/>Fig.3 (Color online)Electroluminescence spectra of a metal/p-GaN/AlGaN/GaN diode under different forward bias voltages measured at room temperature

图3 室温下肖特基型p-GaN栅极在不同正向栅压的电致发光光谱
Fig.3 (Color online)Electroluminescence spectra of a metal/p-GaN/AlGaN/GaN diode under different forward bias voltages measured at room temperature

图4 栅压为8 V时,p-GaN栅极在不同温度下的电致发光光谱<br/>Fig.4 (Color online)Electroluminescence spectra of a metal/p-GaN/AlGaN/GaN diode with 8 V bias voltage measured at different temperatures

图4 栅压为8 V时,p-GaN栅极在不同温度下的电致发光光谱
Fig.4 (Color online)Electroluminescence spectra of a metal/p-GaN/AlGaN/GaN diode with 8 V bias voltage measured at different temperatures

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备注

引言

1 晶圆结构、器件制造及表征

2 不同偏压下的电致发光光谱

3 变温电致发光光谱

4 结语

期刊信息

备注

引言

1 晶圆结构、器件制造及表征

2 不同偏压下的电致发光光谱

3 变温电致发光光谱

4 结 语

期刊信息

4 结语