深圳大学学报理工版

实现不同基底间高效率、高质量的二维原子晶体转移(即转移技术),是开展二维晶体异质结及柔性器件研究与应用的关键. 近年以二硫化钼为代表的过渡金属硫化物(transition metal dichalcogenides,TMDs)二维半导体已成为继石墨烯之后的二维材料研究热点. 目前,TMDs常用转移技术主要包括湿法转移、干法转移、热释放胶带辅助、表面能辅助、鼓泡转移以及真空热压法等. 这些方法各有利弊:湿法转移成本低、步骤简洁,但依赖聚合物支撑,容易对TMDs造成污染; 干法转移借助精密位移技术可实现精准控制,特别适用微晶定位转移,但转移成功率有待提升; 热释放胶带巧妙利用金属膜与TMDs二维材料间较强的吸附力,能够在不转移的情况下,直接在原始基底上构造阵列结构,但步骤相对复杂; 表面能辅助法利用水在不同界面表面能差异,可实现快速自动剥离,但易引入褶皱; 鼓泡转移则是通过电化学或超声方式产生的气泡崩塌使二维材料与基底界面分离,同样材料表面容易产生褶皱和破裂等缺陷; 真空热压法在组装高质量、大面积多层异质结方面独具优势. 该述评可为恰当选择转移方法提供指引.

High efficiency and high quality transfer techniques of two-dimensional(2D)materials between different substrates are vital for fabrication of 2D heterojunctions and their flexible devices. Triggered by graphene, 2D transition metal dichalcogenides(TMDs)are becoming a hot topic in 2D material research community. In the past few years, various transfer techniques mainly including wet transfer, dry transfer, thermal release tape assisted, surface energy assisted transfer, bubble transfer, and programmed vacuum stack transfer have been demonstrated. Their comparisons show that the wet transfer is the most popular one, but it relies on the polymer support and is prone to contamination of 2D materials. The dry transfer is carried out under the precise position control by a three-dimensional micromanipulator, therefore, it is suitable for building heterojunctions based on mechanical exfoliated microflake crystals. However, the efficiency is still relatively low. The thermal release tape assisted technique utilizing the strong adhesion force between the metal film and the TMDs can construct arrays directly on original substrate without transfer, however the steps are relatively complex. The surface energy assisted transfer can realize fast and automatically peel off the TMDs from the substrates according to the difference of surface energies, but it is easy to introduce folds. The bubble transfer is carried out by the bubble collapse caused by ultrasonic or electrochemical reaction, then separates the 2D material from the substrate, but the surface of the TMDs is prone to wrinkle and fracture. Recently, programmed vacuum stack shows unique advantages in assembling multi-layer heterojunction with large-scale and high-quality. This review not only provides a scientific reference for on-demand transfer method selection, but also sheds light on the development of new transfer technologies.

引言
1 湿法转移
2 干法转移
3 表面能辅助法
4 热释放胶带辅助法
5 鼓泡转移法
6 真空热压法
7 结语

图1 湿法转移过程示意图<br/>Fig.1 Schematic diagram of the wet transfer process

图1 湿法转移过程示意图
Fig.1 Schematic diagram of the wet transfer process

图2 利用PTAS生长的转移方法及转移到不同基底上的MoS2光学照片[15]<br/>Fig.2 Illustration of transfer method based on PTAS and optical images of transferred MoS2 on different substrates[15]

图2 利用PTAS生长的转移方法及转移到不同基底上的MoS2光学照片[15]
Fig.2 Illustration of transfer method based on PTAS and optical images of transferred MoS2 on different substrates[15]

图3 基于晶体管结构PVA溶解辅助转移过程[16]<br/>Fig.3 Illustration of water-soluble PVA-assisted transfer process[16]

图3 基于晶体管结构PVA溶解辅助转移过程[16]
Fig.3 Illustration of water-soluble PVA-assisted transfer process[16]

图4 基于晶体管基底直接干法转移过程[19]<br/>Fig.4 Illustration of the dry-transfer process based on the transistor substrate[19]

图4 基于晶体管基底直接干法转移过程[19]
Fig.4 Illustration of the dry-transfer process based on the transistor substrate[19]

图5 基于毛细管力的干法转移[20]<br/>Fig.5 Capillary-force-assisted dry transfer[20]

图5 基于毛细管力的干法转移[20]
Fig.5 Capillary-force-assisted dry transfer[20]

图6 表面能辅助转移过程[23]<br/>Fig.6 Illustration of the surface energy assisted transfer process[23]

图6 表面能辅助转移过程[23]
Fig.6 Illustration of the surface energy assisted transfer process[23]

图7 热释放胶带辅助转移过程和样品转移前后光学照片、SEM,并与PMMA湿法转移对比[27]<br/>Fig.7 Illustration of thermal release tape assisted transfer process and optical images and SEM of the sample before and after transfer, contrasted with PMMA wet transfer[27]

图7 热释放胶带辅助转移过程和样品转移前后光学照片、SEM,并与PMMA湿法转移对比[27]
Fig.7 Illustration of thermal release tape assisted transfer process and optical images and SEM of the sample before and after transfer, contrasted with PMMA wet transfer[27]

图8 热释放胶带辅助转移法[29]<br/>Fig.8 Illustration of thermal release tape assisted transfer method[29]

图8 热释放胶带辅助转移法[29]
Fig.8 Illustration of thermal release tape assisted transfer method[29]

图9 电化学鼓泡转移法[31]<br/>Fig.9 Illustration of electrochemical bubble transferprocess[31]

图9 电化学鼓泡转移法[31]
Fig.9 Illustration of electrochemical bubble transferprocess[31]

图10 MoS2超声鼓泡转移图[32]<br/>Fig.10 Illustration of ultrasonic bubbling transfer of MoS2[32]

图10 MoS2超声鼓泡转移图[32]
Fig.10 Illustration of ultrasonic bubbling transfer of MoS2[32]

图11 真空热压法的转移过程示意图[33]<br/>Fig.11 Illustration of programmed vacuum stack transfer process[33]

图11 真空热压法的转移过程示意图[33]
Fig.11 Illustration of programmed vacuum stack transfer process[33]

表1 过渡金属硫化物几种转移方法对比<br/>Table 1 Summary of the main TMDs transfer methods

表1 过渡金属硫化物几种转移方法对比
Table 1 Summary of the main TMDs transfer methods

[1] TIEN D H, PARK J Y, KIM K B, et al. Study of graphene-based 2D-heterostructure device fabricated by all-dry transfer process[J]. ACS Applied Materials & Interfaces, 2016, 8(5): 3072-3078.
[2] ZHANG Jincan, LIN Li, SUN Luzhao, et al. Clean transfer of large graphene single crystals for high-intactness suspended membranes and liquid cells[J]. Advanced Materials, 2017, 29(26): 1700639.
[3] 陈牧,颜悦,张晓锋,等.大面积石墨烯薄膜转移技术研究进展[J].航空材料学报,2015, 35(2):1-11.
[4] 黄曼,郭云龙,武斌,等.化学气相沉积法合成石墨烯的转移技术研究进展[J].化学通报,2012, 75(11):974.
[5] BOSCA A, PEDROS J, MARTINEZ J, et al. Automatic graphene transfer system for improved material quality and efficiency[J]. Scientific Reports, 2016, 6: 21676.
[6] ZHANG Guohui, GUEELL A G, KIRKMAN P M, et al. Versatile polymer-free graphene transfer method and applications[J]. ACS Applied Materials & Interfaces, 2016, 8(12): 8008-8016.
[7] ZHANG Zhikun, DU Jinhong, ZHANG Dingdong, et al. Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes[J]. Nature Communications, 2017, 8: 14560.
[8] CHEN Yi, GONG Xiaolei, GAI Jinggang. Progress and challenges in transfer of large-area graphene films[J]. Advance Science, 2016, 3(8): 1500343.
[9] WANG Xiaotian, KANG K, CHEN Siwei, et al. Location-specific growth and transfer of arrayed MoS2 monolayers with controllable size[J]. 2D Materials, 2017, 4(2): 025093.
[10] ELÍAS A L, PEREA-LOPEZ N, CASTRO-BELTRAN A A, et al. Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers[J]. ACS Nano, 2013, 7(6): 5235-5242.
[11] LIU Kengku, ZHANG Wenjing, LEE Y H, et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates[J]. Nano Letters, 2012, 12(3): 1538-1544.
[12] NGOC H V, QIAN Yongteng, HAN S K, et al. PMMA-etching-free transfer of wafer-scale chemical vapor deposition two-dimensional atomic crystal by a water soluble polyvinyl alcohol polymer method[J]. Scientific Reports, 2016, 6: 33096.
[13] YANG S Y, OH J G, JUNG D Y, et al. Metal-etching-free direct delamination and transfer of single-layer graphene with a high degree of freedom[J]. Small, 2015, 11(2): 175-181.
[14] KHAN U, MAY P, O'NEILL A, et al. Polymer reinforcement using liquid-exfoliated boron nitride nanosheets[J]. Nanoscale, 2013, 5(2): 581-587.
[15] LEE Y H, YU Lili, WANG Han, et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces[J]. Nano Letters, 2013, 13(4): 1852-1857.
[16] SALVATORE G A, MUENZENRIEDER N, BARRAUD C A, et al. Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate[J]. ACS Nano, 2013, 7(10): 8809-8815.
[17] CALDWELL J D, ANDERSON T J, CULBERTSON J C, et al. Technique for the dry transfer of epitaxial graphene onto arbitrary substrates[J]. ACS Nano, 2010, 4(2): 1108-1114.
[18] UWANNO T, HATTORI Y, TANIGUCHI T, et al. Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system[J]. 2D Materials, 2015, 2(4): 041002.
[19] YANG Rui, ZHENG Xuqian, WANG Zenghui, et al. Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing[J]. Journal of Vacuum Science & Technology B, 2014, 32(6): 061203.
[20] MA Xuezhi, LIU Qiushi, XU Da, et al. Capillary-force-assisted clean-stamp transfer of two-dimensional materials[J]. Nano Letters, 2017, 17(11): 6961- 6967.
[21] SCHNEIDER G F, CALADO V E, ZANDBERGEN H A, et al. Wedging transfer of nanostructures[J]. Nano Letters, 2010, 10(5): 1912-1916.
[22] LI Hai, WU J, HUANG Xiao, et al. A universal, rapid method for clean transfer of nanostructures onto various substrates[J]. ACS Nano, 2014, 8(7): 6563- 6570.
[23] GURARSLAN A, YU Yifei, SU Liqin, et al. Surface-energy-assisted perfect transfer of centimeter-scale mono layer and few-layer MoS2 films onto arbitrary substrates[J]. ACS Nano, 2014, 8(11): 11522-11528.
[24] KOZAWA D, CARVALHO A, VERZHBITSKIY I A, et al. Evidence for fast interlayer energy transfer in MoSe2/WS2 heterostructures[J]. Nano Letters, 2016, 16(7): 4087- 4093.
[25] YU Hua, LIAO Mengzhou, ZHAO Wenjuan, et al. Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films[J]. ACS Nano, 2017, 11(12): 12001-12007.
[26] MURATA A, OSHIMA T, ARIMITSU Y, et al. Method of heat-peeling chip cut pieces from heat peel type adhesive sheet, electronic part, and circuit board: U.S.Patent Application 10/485,153[P]. 2002-07-23.
[27] LIN Ziyuan, ZHAO Yuda, ZHOU Changjian, et al. Controllable growth of large-size crystalline MoS2 and resist-free transfer assisted with a Cu thin film[J]. Scientific Reports, 2015, 5: 18596.
[28] RIEDL C, COLETTI C, STARKE U. Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation[J]. Journal of Physics Applied Physics, 2010, 43(37): 221-229.
[29] ZHAO Jing, YU Hua, CHEN Wei, et al. Patterned peeling 2D MoS2 off the substrate[J]. ACS Applied Materials & Interfaces, 2016, 8(26): 16546-16550.
[30] ROSA D L, LINDVALL N, COLE M T, et al. Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu[J].Applied Physics Letters, 2013, 102(2): 022101.
[31] YUN S J, CHAE S H, KIM H, et al. Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils[J]. ACS Nano, 2015, 9(5): 5510-5519.
[32] MA Donglin, SHI Jianping, JI Qingqing, et al. A universal etching-free transfer of MoS2 films for applications in photodetectors[J]. Nano Research, 2015, 8(11): 3662-3672.
[33] KANG K, LEE K H, HAN Yimo, et al. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures[J]. Nature, 2017, 550(7675): 229-233.
[34] BAE S, KIM H, LEE Y, et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes[J].Nature Nanotechnology, 2010, 5(8): 574-578.
[35] JUANG Z Y, WU C Y, LU A Y, et al. Graphene synthesis by chemical vapor deposition and transfer by a roll-to-roll process[J]. Carbon, 2010, 48(11): 3169-3174.
[36] KOBAYASHI T, BANDO M, KIMURA N, et al. Production of a 100-m-long high-quality graphene transparent conductive film by roll-to-roll chemical vapor deposition and transfer process[J]. Applied Physics Letters, 2013, 102(2): 023112.

备注

引言

1 湿法转移

2 干法转移

3 表面能辅助法

4 热释放胶带辅助法

5 鼓泡转移法

6 真空热压法

7 结语

期刊信息

备注

引言