高能X射线入射时CsI光阴极的光电发射特性

深圳大学光电工程学院,光电子器件与系统教育部/广东省重点实验室,广东深圳518060

半导体技术; CsI光阴极; 惯性约束聚变; X射线条纹相机; 高能X射线; 蒙特卡罗模型

Photoemission characteristics of a CsI photocathode under high energy X-ray
Li Xiang, Gu Li, Zong Fangke, and Yang Qinlao

College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, Guangdong Province, P.R.China

semiconductor technology; CsI photocathode; inertial confinement fusion; X-ray streak camera; high energy X-ray; Monte Carlo model

DOI: 10.3724/SP.J.1249.2016.03254

备注

采用蒙特卡罗方法建立模型,研究CsI光阴极在高能X射线照射时的光电发射特性,得到X射线条纹相机中CsI光阴极在高能X射线入射时的性能参数.计算CsI光阴极厚度为100~1 000 nm,入射X射线能量为1~30 keV时CsI光阴极的量子产额、出射二次电子的角度分布、位置分布以及能量分布.结果显示,CsI光阴极在高能X射线入射时的极限空间分辨率约为7~9 nm,可满足X射线条纹相机对高时空分辨的使用需求.

A model to investigate the characteristics of high energy X-ray induced secondary electron(SE)emission from a CsI photocathode used in an X-ray streak camera is proposed by the Monte Carlo method. The quantum yield of the CsI photocathode and the angular distribution, position distribution and energy distribution of the emitted SEs are calculated with the incident X-ray energy range from 1 to 30 keV and a CsI thickness from 100 to 1 000 nm. Simulation results indicate that the spatial resolution limit of a CsI photocathode is about 7~9 nm when high energy X-ray irradiates. Therefore CsI photocathode is able to satisfy the operating requirement for high temporal resolution and spatial resolution of an X-ray streak camera.

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