深圳大学学报理工版

以Ga、金属Al颗粒或AlCl3·6H2O粉末及NH3为原料,利用化学气相沉积法生长AlxGa1-xN纳米线. 研究发现,气体的流速、基底有无催化剂、原材料及生长温度等都对其生长有影响. 在总流量固定的前提下,较高的NH3流量比会在基底上生长出致密的AlxGa1-xN纳米线. 同样生长条件下,在未经催化剂处理的Si基底表面没有观察到纳米线. 对于蓝宝石基底,催化剂存在与否都会生长出AlxGa1-xN纳米线. 研究表明,原材料对于AlxGa1-xN纳米线的生长和性能都有影响. 相比于AlCl3,以金属Al颗粒作为Al源,AlxGa1-xN纳米线能够在较大的温度范围内生长,且有较好的光致发光特性.

This paper reports the chemical vapor deposition growth of AlxGa1-xN nanowires with Ga, metallic Al particles or AlCl3·6H2O powders and NH3 as raw materials. It is found that the growth is mainly influenced by gas flow rates, substrates with or without catalysts, the rawmaterials, and the growth temperatures etc. If the total flow rate is fixed, denser AlxGa1-xN nanowires can be obtained with larger NH3 flow rate. Under same growth conditions, nanowires cannot be observed on the Si substrate if no catalysts are used, but catalysts are not necessary if sapphire substrate is used. Additionally, the raw materials affect the growth and properties of AlxGa1-xN nanowires. As compared with AlCl3 as the starting Al source, AlxGa1-xN nanowires can be fabricated in a wider temperature range by using the metallic Al particles as Al source. Moreover, the prepared AlxGa1-xN nanowires have better photoluminescence.

引言
1 实验
2 结果与讨论
3 结语

图1 不同Ar和NH3流量制备的样品的SEM表面形貌(固定总气体流量为100 sccm)<br/>Fig.1 Typical SEM images for the samples grown with different Ar and NH3 gas flow rates (for 100 sccm as total flow rate)

图1 不同Ar和NH3流量制备的样品的SEM表面形貌(固定总气体流量为100 sccm)
Fig.1 Typical SEM images for the samples grown with different Ar and NH3 gas flow rates (for 100 sccm as total flow rate)

图2 在带或不带催化剂的不同基底上制备的样品SEM表面形貌图<br/>Fig.2 SEM images of samples grown on different substrates with or without catalysts

图2 在带或不带催化剂的不同基底上制备的样品SEM表面形貌图
Fig.2 SEM images of samples grown on different substrates with or without catalysts

图3 不同Al源及不同生长温度制备的样品SEM表面形貌图<br/>Fig.3 SEM images of samples fabricated at different growth temperatures and with different Al sources

图3 不同Al源及不同生长温度制备的样品SEM表面形貌图
Fig.3 SEM images of samples fabricated at different growth temperatures and with different Al sources

图4 不同Al源及不同生长温度制备的样品XRD图谱<br/>Fig.4 XRD patterns of samples grown at different temperatures and with different Al sources.

图4 不同Al源及不同生长温度制备的样品XRD图谱
Fig.4 XRD patterns of samples grown at different temperatures and with different Al sources.

图5 AlxGa1-xN纳米线的TEM图像<br/>Fig.5 TEM images of AlxGa1-xN nanowires

图5 AlxGa1-xN纳米线的TEM图像
Fig.5 TEM images of AlxGa1-xN nanowires

图6 不同Al源制备的AlxGa1-xN纳米线样品在室温下的PL光谱图<br/>Fig.6 PL spectra of samples prepared with different Al sources at room temperature

图6 不同Al源制备的AlxGa1-xN纳米线样品在室温下的PL光谱图
Fig.6 PL spectra of samples prepared with different Al sources at room temperature

[1] Ye Baisong, Yuan Shuigang, Wang Jiqiang, et al. Design of a portable UV Camera for Corona Detection[J]. Infrared, 2013,34(4):24-28.(in Chinese)
[2] Ni Jinyu, Dong Xun, Zhou Jianjun, et al. AlGaN/GaN HEMT on Si substrate with Al-content step-graded AlGaN transition layers [J]. Research & Progress of Solid State Electronics, 2011,31(6):527-531.(in Chinese)
[3] Huang Yimin, Li Xiangyang, Gong Haimei. Inftared and laser engineering [J]2007,36(S):209-213.(in Chinese)
[4] Chen Tangsheng, Jiao Gang, Xue Fangshi, et al. Undoped AlGaN/GaN microwave power HEMT[J]. Chinese Journal of Semiconductors, 2004,25(1):69-74.(in Chinese)
[5] Pierret A, Bougerol C, Murcia-Mascaros S, et al. Growth, structural and optical properties of AlGaN nanowires in the whole composition range[J]. Nanotechnology, 2013, 24(1): 115704-1-115704-9.
[6] Allah R F, Ben T, Songmuang R, et al. Imaging and analysis by transmission electron microscopy of the spontaneous formation of Al-rich shell structure in AlxGa1-xN/GaN nanowires[J]. Applied Physics Express, 2012, 5(4): 045002-1- 045002-3.
[7] Lari L, Walther T, Gass M H, et al. Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires[J]. Journal of Crystal Growth, 2011, 327(1): 27-34.
[8] Sato T, Oikawa T, Hasegawa H, et al. Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar(0001)substrates and its growth mechanism[J]. Journal of Vacuum Science and Technology B, 2006, 24(4): 2087-2092.
[9] Pierret A, Bougerol C, Gayral B, et al. Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence[J]. Nanotechnology, 2013, 24(30): 305703-1-305703-7.
[10] Park Y S, Hwang B R, Lee J C, et al. Self-assembled AlxGa1-xN nanorods grown on Si(001)substrates by using plasma-assisted molecular beam epitaxy[J]. Nanotechnology, 2006, 17(18): 4640- 4643.
[11] Ristic' J, Sánchez-García M A, Calleja E, et al. AlGaN nanocolumns grown by molecular beam epitaxy: optical and structural characterization[J]. Physical Status Solidi A, 2002, 192(1): 60- 66.
[12] Pierret A, Bougerol C, Den Hertog M, et al. Structural and optical properties of AlxGa1-xN nanowires[J]. Physical Status Solidi RRL, 2013, 7(10): 868-873.
[13] Jacopin G, Rigutti L, Bellei S, et al. Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires[J]. Nanotechnology, 2012, 23(32): 325701-1-325701- 6.
[14] Su J, Gherasimova M, Cui G, et al. Growth of AlGaN nanowires by metalorganic chemical vapor deposition[J]. Applied Physics Letters, 2005, 87(18):183108-1-183108-3.
[15] Baird L, Ong C P, Adam Cole R, et al. Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires[J]. Applied Physics Letters, 2011, 98(13):132104-1-132104-3.
[16] Simpkins B S, Mastro M A, Eddy C R, et al. Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires[J]. Journal of Applied Physics, 2011, 110(4): 044303-1- 044303- 4.
[17] He Chengyu, Wu Qiang, Wang Xizhang, et al. Growth and characterization of ternary AlGaN alloy nanocones across the entire composition range[J]. ACS Nano, 2011, 5(2): 1291-1293.
[18] Chen Fei, Ji Xiaohong, Lu Zhenya, et al. Structural and raman properties of compositionally tunable AlxGa1-xN(0.66 ≤ x≤ 1)nanowires[J]. Materials Science and Engineering B, 2014, 183(5): 24-28.
[19] Zhou Shaomin. Fabrication and PL of Al-doped gallium nitride nanowires[J]. Physics Letters A, 2006, 357(4/5): 374-377.
[20] Hong L, Liu Z, Zhang Xitian, et al. Self-catalytic growth of single-phase AlGaN alloy nanowires by chemical vapor deposition[J]. Applied Physics Letters, 2006, 89(19):193105-1-193105-3.
[21] Gaevski M E, Sun Wenhong, Yang Jinwei, et al. Non-catalyst growth and characterization of α-plane AlGaN nanowires[J]. Physical Status Solidi A, 2006, 203(7):1696-1699.
[22] Wang Xuebin, Song Jinhui, Zhang Fan, et al. Electricity generation based on one-dimensional group-III nitride nanomaterials[J]. Advanced Materials, 2010, 22(19): 2155-2158.
[23] Choi Heon-Jin, Johnson J C, He Rongrui, et al. Self-organized GaN quantum wire UV lasers[J]. Journal of Physics and Chemistry B, 2003, 107(34): 8721-8725.

备注

引言

1 实验

2 结果与讨论

3 结语

期刊信息

备注

引言

1 实 验

2 结果与讨论

3 结 语

期刊信息

1 实验

3 结语