[1]邱然,刘禹涵,李百奎.肖特基型p-GaN栅极电致发光研究[J].深圳大学学报理工版,2021,38(3):227-231.[doi:10.3724/SP.J.1249.2021.03227]
 QIU Ran,LIU Yuhan,and LI Baikui.Electroluminescence from a Schottky-type p-GaN gate structure[J].Journal of Shenzhen University Science and Engineering,2021,38(3):227-231.[doi:10.3724/SP.J.1249.2021.03227]
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肖特基型p-GaN栅极电致发光研究()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第38卷
期数:
2021年第3期
页码:
227-231
栏目:
光电工程
出版日期:
2021-05-14

文章信息/Info

Title:
Electroluminescence from a Schottky-type p-GaN gate structure
文章编号:
202103002
作者:
邱然刘禹涵李百奎
深圳大学物理与光电工程学院,光电子器件与系统教育部/广东省重点实验室,广东深圳 518060
Author(s):
QIU Ran LIU Yuhan and LI Baikui
College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, Guangdong Province, P.R.China
关键词:
光学工程氮化镓功率电子器件高电子迁移率场效应管常关型栅极工程电致发光
Keywords:
optical engineering gallium nitride (GaN) power electronic device high electron mobility transistors (HEMTs) normally-off gate engineering electroluminescence
分类号:
O47;O433
DOI:
10.3724/SP.J.1249.2021.03227
文献标志码:
A
摘要:
制造肖特基型Ni/p-GaN/AlGaN/GaN结构的p-GaN栅极器件,并研究该器件在不同温度与正向偏压下的电致发光现象.当栅极偏压大于4 V时,可以观测到源自p-GaN层的电致发光;当栅极偏压大于6 V时,可以观测到源自沟道层的氮化镓带边发光;当温度升高时,电致发光的强度增加.电致发光光谱随偏压及温度的演变过程,揭示了p-GaN栅结构中电子和空穴的非对称性注入过程,以及Ni/p-GaN界面处的热致空穴注入增强效应.研究有助于理解和提高p-GaN栅功率器件的稳定性和可靠性.
Abstract:
In this paper, we fabricate a Shcottky-type Ni/p-GaN/AlGaN/GaN device, and investigate its electroluminescence characteristics under the different forward bias voltages and at different temperatures. We find that when a forward gate bias is greater than 4 V, the electroluminescence comes from the p-GaN layer, indicating that electrons are injected from the channel into the p-GaN layer. While the forward gate bias is higher than 6 V, the GaN band edge emission emerges, indicating that the holes start to be injected into the channel region. As the temperature increases, the intensity of electroluminescence increases significantly, which reveals that the hole injection at the Ni/p-GaN interface is thermally enhanced. This work is essential for comprehensive understanding and improving the stability and reliability of the p-GaN gate power devices.

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备注/Memo

备注/Memo:
Received:2020-04-19;Accepted:2020-05-20
Foundation:National Natural Science Foundation of China (61604098); Research Start-up Foundation of Shenzhen University (860-000002110207)
Corresponding author:Assistant professor LI Baikui.E-mail: libk@szu.edu.cn
Citation:QIU Ran,LIU Yuhan,LI Baikui.Electroluminescence from a Schottky-type p-GaN gate structure[J]. Journal of Shenzhen University Science and Engineering, 2021, 38(3): 227-231.(in Chinese)
基金项目:国家自然科学基金资助项目(61604098);深圳大学科研启动基金资助项目(860-000002110207)
作者简介:邱然(1996—),深圳大学硕士研究生.研究方向:氮化物半导体的光电性质.E-mail:690597281@qq.com
引文:邱然,刘禹涵,李百奎.肖特基型p-GaN栅极电致发光研究[J]. 深圳大学学报理工版,2021,38(3):227-231.
更新日期/Last Update: 2021-05-30