[1]张东平,朱茂东,杨凯,等.氧分压对磁控溅射VO2薄膜相变性能的影响[J].深圳大学学报理工版,2015,32(6):645-651.[doi:10.3724/SP.J.1249.2015.06645]
 Zhang Dongping,Zhu Maodong,Yang Kai,et al.Influence of oxygen partial pressure on phase transition characteristics of VO2 thin films prepared by magnetron sputtering[J].Journal of Shenzhen University Science and Engineering,2015,32(6):645-651.[doi:10.3724/SP.J.1249.2015.06645]
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氧分压对磁控溅射VO2薄膜相变性能的影响()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第32卷
期数:
2015年第6期
页码:
645-651
栏目:
材料科学
出版日期:
2015-11-23

文章信息/Info

Title:
Influence of oxygen partial pressure on phase transition characteristics of VO2 thin films prepared by magnetron sputtering
文章编号:
201506013
作者:
张东平朱茂东杨凯刘毅黄仁桂蔡兴民范平
深圳大学物理科学与技术学院,薄膜物理与应用研究所,深圳市传感器技术重点实验室,深圳518060
Author(s):
Zhang Dongping Zhu Maodong Yang Kai Liu Yi Huang Rengui Cai Xingmin and Fan Ping
College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
凝聚态物理VO2薄膜磁控溅射氧分压相变微结构光学透过率
Keywords:
condensed matter physics VO2 thin film magnetron sputtering oxygen partial pressure phase transition microstructure optical transmittance
分类号:
O 484.1
DOI:
10.3724/SP.J.1249.2015.06645
文献标志码:
A
摘要:
采用直流反应磁控溅射工艺在不同氧分压下制备VO2相变薄膜. 分别用X射线衍射仪、扫描电子显微镜、四探针方阻测量系统和分光光度计对薄膜微结构、表面形貌、电学及光学特性进行表征. 测量结果表明,薄膜样品是由包含VO2相在内的多相复杂体系构成的,随着氧分压的增加,薄膜中高价态相的钒氧化物增多. 所有薄膜均呈现出压应力,压应力大小随着氧分压的升高而逐渐减小. 方块电阻温变结果表明,薄膜具有明显半导体-金属相变特性,相变性能随着氧分压的升高呈先增后减特征. 高低温透射谱表明,薄膜具有良好红外开关特性.氧分压改变导致膜中氧空位缺陷密度和微结构变化是VO2薄膜半导体-金属相变性能改变的主因.本实验条件下,具有良好热致相变性能的VO2薄膜的最佳生长氧分压是0.04 Pa.
Abstract:
Vanadium dioxide (VO2) thin films were prepared by reactive magnetron sputtering under different oxygen partial pressures. Microstructure, surface morphology, electrical and optical properties of the samples were characterized by X-ray diffraction instrument, four-point probe system, spectrophotometer, and scanning electron microscopy, respectively. Experimental results indicate that the samples are composed of different complex vanadium oxide phases. With an increase of oxygen partial pressure, the films become higher-valence vanadium oxides. All the samples exhibit compressive intrinsic stresses, and the stress value decreases with the increase of the oxygen partial pressure. The relationship between sheet resistance and temperature reveals remarkable semiconductor-metal transition (SMT) characteristics, and the SMT performance exhibits an initial higher degree and then gets weakened. The transmittance spectra under high and low temperatures reveal that films have a high performance of optical switching in IR range. Variations in oxygen vacancy defect density and microstructure with oxygen partial pressure are the main reasons for SMT variation. In our study, the optimal oxygen partial pressure is 0.04 Pa for high SMT performance VO2 films deposition.

参考文献/References:

[1] Cao Chuanxiang,Gao Yanfeng,Luo Hongjie,et al.Pure single-crystal rutile vanadium dioxide powders:synthesis,mechanism and phase-transformation property[J].Journal of Physical Chemistry C,2008,112(48):18810-18814.
[2] Yang Zheng,Ko C,Shriram R,et al.Oxide electronics utilizing ultrafast metal-insulator transitions[J].Annual Review of Materials Research,2011,41(4):337-367.
[3] Zhou Jiadong,Gao Yanfeng, Zhang Zongtao,et al.VO2 thermochromic smart window for energy savings and generation[J].Scientific Reports,2013,3(1):3029.
[4] Zhao Lili,Miao Lei,Tanemur S,et al.A low cost preparation of VO2 thin films with improved thermochromic properties from a solution-based process[J].Thin Solid Films,2013,543(3):157-161.
[5] Wang Kevin, Cheng Chun, Cardona E, et al. Performance limits of microactuation with vanadium dioxide as a solid engine[J].American Chemical Society Nanotechnology,2013,7(3):2266-2272.
[6] Lee M J,Seo S,Kim D,et al. Two series oxide resistors applicable to high speed and high density nonvolatile memory[J].Advanced Materials,2007,19(22):3919-3923.
[7] Chen Changhong, Yi Xinjian, Zhang Jing, et al. Micromachined uncooled IR bolometer linear array using VO2 thin films[J].International Journal of Infrared and Millimeter Waves,2001,22(1):53-58.
[8] Soltan M,Chaker M,Haddad E,et al.1×2 optical switch devices based on semiconductor-to-metallic phase transition characteristics of VO2 smart coatings[J].Measurement Science and Technology,2006,17(5):1052-1056.
[9] Oleinik A S.Optical data recording with vanadium dioxide-based film reversible media[J].Technical Physics,2002,47(8):1014-1018.
[10] Ishizaki H,Nakajim T,Shinod K,et al.Improvement of temperature coefficient of resistance of a VO2 film on an SiN/polyimide/Si substrate by excimer laser irradiation for IR sensors[J].Japanese Journal of Applied Physics,2014,53(5):05FB15-1-05FB15-4.
[11] Dragoman M,Cismaru A,Hartnage H,et al. Reversible metal-semiconductor transitions for microwave switching applications[J].Applied Physics Letter,2006,88(7):073503-1-073503-3.
[12] Chen Zhang,Gao Yanfeng,Kang Litao,et al. VO2-based double-layered films for smart windows: Optical design,all-solution preparation and improved properties[J].Solar Energy Materials & Solar Cells ,2011,95(9): 2677-2684.
[13] Lu Songwei,Hou Lisong,Gan Fuxi,et al. Structure and optical property changes of sol-gel derived VO2 thin films[J].Advanced Materials,1997,9(3):244-246.
[14] Chen Sihai,Ma Hong,Yi Xinjian,et al.Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation[J].Sensors Actuators A:Physical,2004,115(1):28-31.
[15] Luo Zhenfei, Zhou Xun,Yan Dawei,et al.Effects of thickness on the nanocrystalline structure and semi-conductor-metal transition characteristics of vanadium dioxide thin films[J].Thin Solid Films,2014,550(1):227-232.
[16] Cheng Chun,Liu Kai, Xiang Bin,et al.Ultra-long, free-standing,single-crystalline vanadium dioxide micro/nanowires grown by simple thermal evaporation[J].Applied Physics Letter,2012,100(10):103-111.
[17] Lyu Weizhong, Huang Dezhen, Luo zhongkuan, et al. Hydrothermal synthesis and characterization of tungsten and fluorine co-doped vanadium dioxide[J]. Journal of Shenzhen University Science and Engineering, 2015, 32(4): 385-389.(in Chinese)
吕维忠,黄德贞,罗仲宽,等.钨-氟共掺杂二氧化钒的水热法制备及表征[J]. 深圳大学学报理工版,2015,32(4):385-389.
[18] Chang Y J,Koo C H,Yang J S,et al. Phase coexistence in metal-insulator transition of VO2 thin films[J].Thin Solid Films,2005,486(1/2):46-49.
[19] Manning T D,Parkin I P,Pemble M E,et al.Intelligent window coatings: atmospheric pressure chemical vapor deposition of tungsten-doped vanadium dioxide[J].Chemistry Materials,2004,16(4):744-749.
[20] Fu Deyi,Liu Kai,Tao Tao, et al. Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films[J].Journal of Applied Physics, 2013,113(4):043707-1-043707-7.
[21] Ohring M.Materials science of thin films[M].Singapore:Elsevier (Singapore) Pte Ltd,2006:222-223.
[22] Zhang Dongping,Huang Rengui,Zhang Ting,et al. Effect of substrate temperature on the microstructure,optical,and electrical properties of reactive DC magnetron sputtering vanadium oxide films[J].Physics Status Solidi A,2012,209(11):2229-2234 .
[23] Hu Juguang, Tang Huabin, Li Qiwen, et al. Study on the structure of crystallized CIGS thin films by near infrared laser annealing[J]. Journal of Shenzhen University Science and Engineering, 2013, 30(6): 623-628.(in Chinese)
胡居广,汤华斌,李启文,等. 近红外激光退火晶化CIGS薄膜研究[J].深圳大学学报理工版, 2013,30(6) :623 -628.
[24] Kim H, Charipar N, Osofsky M, et al. Optimization of the semiconductor-metal transition in VO2 epitaxial thin films as a function of oxygen growth pressure[J].Applied Physics Letter,2014,104(8):081913-1-081913-5.
[25] Fan L L,Chen S,Wu YF,et al.Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy[J].Applied Physics Letter,2013,103(13):131914-1-131914-5.
[26] Yang Z,Ko C,Ramana S,et al.Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals[J].Journal of Applied Physics,2010,108(7):073708-1-073708-6.

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备注/Memo

备注/Memo:
Received:2015-06-17;Accepted:2015-10-20
Foundation:National Natural Science Foundation of China (11174208); Shenzhen Science and Technology Project (JCYJ20130326113026749)
Corresponding author:Associate professor Liu Yi. E-mail:liuy@szu.edu.cn
Citation:Zhang Dongping, Zhu Maodong, Yang Kai, et al. Influence of oxygen partial pressure on phase transition characteristics of VO2 thin films prepared by magnetron sputtering[J]. Journal of Shenzhen University Science and Engineering, 2015, 32(6): 645-651.(in Chinese)
基金项目:国家自然科学基金资助项目(11174208);深圳市科技计划资助项目(JCYJ20130326113026749)
作者简介:张东平(1972—),男(汉族),安徽省肥东县人,深圳大学教授.E-mail:zdpsiom@mail.szu.edu.cn
引文:张东平,朱茂东,杨凯,等.氧分压对磁控溅射VO2薄膜相变性能的影响[J]. 深圳大学学报理工版,2015,32(6):645-651.
更新日期/Last Update: 2015-11-06