[1]罗景庭,钟鑫,朱茂东,等.ZnO薄膜生长及声表面波性能研究[J].深圳大学学报理工版,2015,32(1):17-24.[doi:10.3724/SP.J.1249.2015.01017]
 Luo Jingting,Zhong Xin,Zhu Maodong,et al.Growth of ZnO thin film and its surface acoustic wave properties[J].Journal of Shenzhen University Science and Engineering,2015,32(1):17-24.[doi:10.3724/SP.J.1249.2015.01017]
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ZnO薄膜生长及声表面波性能研究()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第32卷
期数:
2015年第1期
页码:
17-24
栏目:
物理
出版日期:
2015-01-20

文章信息/Info

Title:
Growth of ZnO thin film and its surface acoustic wave properties
文章编号:
201501003
作者:
罗景庭钟鑫朱茂东古迪柯鹏飞刘梓昇钟增培范平
深圳大学物理科学与技术学院,薄膜物理与应用研究所,深圳市传感器技术重点实验室,深圳518060
Author(s):
Luo Jingting Zhong Xin Zhu Maodong Gu Di Ke Pengfei Liu Zisheng Zhong Zengpei and Fan Ping
College of Physics Science and Technology, Institute of Thin Film Physics and Applications, Shenzhen key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
凝聚态物理ZnO薄膜(1120)择优取向Love波声表面波器件机电耦合系数温度延迟系数
Keywords:
condensed matter physics ZnO films (1120) preferred orientation Love mode surface acoustic wave devices electromechanical coupling coefficient temperature coefficient of delay
分类号:
O 484.1
DOI:
10.3724/SP.J.1249.2015.01017
文献标志码:
A
摘要:
采用传统射频磁控溅射技术,通过引入SiO2缓冲层以及调节工作气压的方法,在Si衬底上制备具有高度(1120)择优取向的ZnO薄膜.采用X射线衍射技术和原子力显微镜分析ZnO薄膜的晶体特性和择优取向.研究发现,引入SiO2缓冲层能显著减小ZnO/SiO2/Si 三层结构声表面波器件的温度延迟系数(temperature coefficient of delay,TCD),当SiO2缓冲层厚度为200 nm时,ZnO薄膜同时具有(0002)和(1120)择优取向,且TCD值仅为2×10-6-1左右,说明器件温度稳定性佳.当工作气压降低时,ZnO(1120)择优取向增强,相应的声表面波器件的机电耦合系数(K2) 也增大. 在大机电耦合系数和高温度稳定性的ZnO/SiO2/Si三层结构的基础上,有望制作出高性能的Love波声表面波生物传感器.
Abstract:
Using a conventional radio frequency(RF) magnetron sputtering system, we have succeeded in fabricating ZnO films with high (1120) preferred orientation on Si substrate by introducing a SiO2 buffer layer and adjusting the sputtering gas pressure.The crystallographic characteristics and the preferred orientation of ZnO films were characterized by X-ray diffraction (XRD) and atomic force microscopic (AFM) analysis.The temperature coefficient of delay (TCD) of the ZnO/SiO2/Si SAW device decreases significantly when a SiO2 buffer layer is introduced.When the thickness of SiO2 buffer layer is 200 nm, ZnO film shows(0002)and (1120) preferred orientations simultaneously, and the TCD of ZnO/SiO2/Si SAW device is nearly 2×10-6-1, indicating that the device maintains good temperature stability.When the sputtering gas pressure decreases, the (1120) preferred orientation is enhanced, and the corresponding electromechanical coupling coefficient (K2) of the SAW devices enlarges. The tri-layer structure of ZnO/SiO2/Si with large K2 and high temperature stability is promising for fabricating high performance Love mode SAW biosensors.

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备注/Memo

备注/Memo:
Received:2014-09-23;Accepted:2014-11-06
Foundation:National Natural Science Foundation of China(51302173);Foundation for Distinguished Young Talents in Higher Education of Guangdong (2013LYM_0078)
Corresponding author:Lecturer Luo Jingting.E-mail:luojt@szu.edu.cn
Citation:Luo Jingting,Zhong Xin,Zhu Maodong,et al.Growth of ZnO thin film and its surface acoustic wave properties[J]. Journal of Shenzhen University Science and Engineering, 2015, 32(1): 17-24.(in Chinese)
基金项目:国家自然科学基金资助项目(51302173);广东高校优秀青年创新人才培养计划资助项目(2013LYM_0078)
作者简介:罗景庭(1984—),男(汉族),深圳大学讲师、博士.E-mail:luojt@szu.edu.cn
引文:罗景庭,钟鑫,朱茂东,等.ZnO薄膜生长及声表面波性能研究[J]. 深圳大学学报理工版,2015,32(1):17-24.
更新日期/Last Update: 2015-01-05