[1]覃金牛,温喜章,冯武昌,等.退火温度对ZnO薄膜晶体管电学性能的影响[J].深圳大学学报理工版,2019,36(No.4(347-472)):375-381.[doi:10.3724/SP.J.1249.2019.04375]
 QIN Jinniu,WEN Xizhang,FENG Wuchang,et al.Effect of annealing temperature on the electrical properties of ZnO thin-film transistors[J].Journal of Shenzhen University Science and Engineering,2019,36(No.4(347-472)):375-381.[doi:10.3724/SP.J.1249.2019.04375]
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退火温度对ZnO薄膜晶体管电学性能的影响()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第36卷
期数:
2019年No.4(347-472)
页码:
375-381
栏目:
【材料科学】
出版日期:
2019-07-10

文章信息/Info

Title:
Effect of annealing temperature on the electrical properties of ZnO thin-film transistors
作者:
覃金牛温喜章冯武昌许望颖朱德亮曹培江柳文军韩舜刘新科方明曾玉祥吕有明
广东省功能材料界面工程研究中心,深圳市特种功能材料实验室,深圳大学材料学院,广东深圳,518060
Author(s):
QIN Jinniu WEN Xizhang FENG Wuchang XU Wangying ZHU Deliang CAO Peijiang LIU Wenjun HAN Shun LIU Xinke FANG Ming ZENG Yuxiang and LU Youming
Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, Guangdong Province, P.R.China
关键词:
薄膜材料ZnO薄膜晶体管 退火温度迁移率界面
Keywords:
film materials ZnO thin-film transistor annealing temperature mobility interface
分类号:
TP322
DOI:
10.3724/SP.J.1249.2019.04375
文献标志码:
A
摘要:
为研究退火温度(从室温到500 ℃)对ZnO薄膜和薄膜晶体管(thin-film transistor, TFT)电性能的影响,使用X射线衍射、扫描电子显微镜、原子力显微镜、X射线光电子能谱和光致发光等技术对ZnO-TFT进行表征. 实验结果表明,具有400 ℃退火温度的ZnO-TFT表现出最佳性能,迁移率为2.7 cm2/Vs,阈值电压为4.6 V,开/关电流比为5×105,亚阈值摆幅为 0.98 V/Dec. 电性能的改善可归因于载流子浓度的降低,ZnO膜结晶的增强,以及氧化物半导体层和绝缘层之间界面的改善.
Abstract:
In order to study the influence of annealing temperature (from room temperature to 500 ℃) on the electrical properties of ZnO thin film and thin-film transistors (TFTs), we carefully characterized the ZnO-TFT by using a wide range of techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The results show that the ZnO-TFTs annealed at 400 ℃ have the best performance with mobility ratio of 2.7 cm2/Vs, threshold voltage of 4.6 V, on/off current ratio of 5×105 and subthreshold swing of 0.98 V/Dec. The improvement of the electrical performance could be attributed to the decrease of carrier concentration, the enhancement of crystallization in ZnO films, and the improvement of interface between the oxide semiconductor layer and the insulation layer.

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更新日期/Last Update: 2019-07-04