HAN Suting,FU Jingjing,and ZHOU Ye.Nonvolatile memory based on functional materials[J].Journal of Shenzhen University Science and Engineering,2019,36(3):221-229.[doi:10.3724/SP.J.1249.2019.03221]





Nonvolatile memory based on functional materials
1) 深圳大学微纳光电子学研究院,广东深圳 518060;2)深圳大学高等研究院, 广东深圳 518060
HAN Suting1 FU Jingjing2 and ZHOU Ye2
1) Institute of Micro-nano Optoelectronics, Shenzhen University, Shenzhen 518060, Guangdong Province, P.R.China
2) Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong Province, P.R.China
微电子学与固体电子学 非易失存储器 有机存储器 先进功能材料 金属纳米粒子 光存储
microelectronics and solid electronics nonvolatile memory organic memory advanced functional material metal nanoparticles optical storage
With the advent of the era of information explosion, memory is required to store more information in unit volume. However, people encounter the bottleneck of Moore’s Law failure in reducing device size. In order to overcome the theoretical limitation, the use of some functional materials for memory has become a research hotspot. This paper outlines the non-volatile memory based on three types of functional materials: Polyoxometalates (POMs)-based memory, in which POMs have strong electronic reception capability and potential for molecular-level storage; Metal nanoparticles-based memory which has attracted much attention in the field of advanced memory as well, due to its advantages of improving device performance and realizing real-time controllable storage; Biomaterial-based memory, which is another rising-star material used in the field of memory research because special biomaterials have reversible resistance switching, together with a series of other advantages such as sustainable availability of raw materials, self-degradation and so on. This review also discusses the shortcomings of these three types of materials used in memory devices.


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Foundation:National Natural Science Foundation of China (61604097)
Corresponding author:Professor ZHOU Ye. E-mail: yezhou@szu.edu.cn; Associate professor HAN Suting. E-mail: sutinghan@szu.edu.cn
Citation:HAN Suting, FU Jingjing, ZHOU Ye. Nonvolatile memory based on functional materials[J]. Journal of Shenzhen University Science and Engineering, 2019, 36(3): 221-229.(in Chinese)
基金项目:国家自然科学基金资助项目 (61604097)
作者简介:韩素婷(1986—),深圳大学副教授、博士. 研究方向:存储器. E-mail:sutinghan@szu.edu.cn
引文:韩素婷,付晶晶,周晔.基于功能材料的非易失性存储器[J]. 深圳大学学报理工版,2019,36(3):221-229.
更新日期/Last Update: 2019-04-22