[1]郭园园,等.CoFeB/MgO磁隧道结的低电流密度磁矩翻转特性[J].深圳大学学报理工版,2015,32(6):571-576.[doi:10.3724/SP.J.1249.2015.06571]
 Guo Yuanyuan,Hao Jianlong,et al.Lower-current-density-induced magnetization switching in the CoFeB/MgO based magnetic tunnel junction[J].Journal of Shenzhen University Science and Engineering,2015,32(6):571-576.[doi:10.3724/SP.J.1249.2015.06571]
点击复制

CoFeB/MgO磁隧道结的低电流密度磁矩翻转特性()
分享到:

《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第32卷
期数:
2015年第6期
页码:
571-576
栏目:
电子与信息科学
出版日期:
2015-11-23

文章信息/Info

Title:
Lower-current-density-induced magnetization switching in the CoFeB/MgO based magnetic tunnel junction
文章编号:
201506003
作者:
郭园园1 2蒿建龙1 2薛海斌1 2刘喆颉3
1)太原理工大学新型传感器与智能控制教育部重点实验室,太原 030024;2)太原理工大学物理与光电工程学院,太原 030024;3)新加坡国立大学电气与计算机工程系,新加坡 117583
Author(s):
Guo Yuanyuan1 2 Hao Jianlong1 2 Xue Haibin1 2 and Liu Zhejie3
1) Key Laboratory of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024, P.R.China
2) College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, P.R.China
3) Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
关键词:
表面与界面物理学磁隧道结自旋转移力矩磁随机存储器磁动力学方程自旋电子学电流藏应磁化翻转
Keywords:
surface and interface physics magnetic tunnel junction spin transfer torque magnetoresistive random access memory magnetic dynamic equation spin electronics curreut induced magnetization reversal
分类号:
O 469
DOI:
10.3724/SP.J.1249.2015.06571
文献标志码:
A
摘要:
基于Landau-Lifshitz-Gilbert-Slonczewski (LLGS)方程,研究平面型CoFeB/MgO磁隧道结的磁矩翻转特性.数值计算结果表明,CoFeB与MgO间的界面各向异性,可降低磁矩翻转的阈值电流密度,达到106 A/cm2量级.固定层磁矩方向和类场自旋转移力矩对自由层磁矩的翻转时间有重要影响.当固定层磁矩与自由层磁矩之间有一个小角度时,可显著加快自由层磁矩翻转.当类场自旋转移力矩与自旋转移力矩之比为负值时,类场自旋转移力矩与自旋转移力矩将促进自由层磁矩翻转;当相应的类场自旋转移力矩与自旋转移力矩之比为正值时,类场自旋转移力矩将阻碍自由层磁矩翻转.该研究可供自旋转移力矩驱动的磁性随机存储器件设计借鉴.
Abstract:
We investigate the magnetization switching properties of in-plane magnetic tunnel junctions based on the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. Numerical results show that a lower magnetization switching current density, which can be decreased down to 106 A/cm2, can be achieved in CoFeB/MgO based magnetic tunnel junctions with interfacial perpendicular anisotropy. In particular, the magnetization orientation of the pinned layer and the field-like spin transfer torque have great effect on the magnetization switching time. A small angle between the magnetization orientations of pinned and free layers can significantly reduce the magnetization switching time. Moreover, when the ratio between the spin torque and the field-like torque takes a negative value, the field-like torque can reduce the magnetization switching time and vice versa. These characteristics can provide a theoretical basis for designing magneto-resistive random access memory driven by spin transfer torque.

参考文献/References:

[1] Slonczewski J C. Current-driven excitation of magnetic multilayers[J]. Journal of Magnetism and Magnetic Materials, 1996, 159(1/2): L1-L7.
[2] Berger L. Emission of spin waves by a magnetic multilayer traversed by a current[J]. Physical Review B, 1996, 54(13): 9353.
[3] Albert F J, Katine J A, Ralph D C. Spin-polarized current switching of a Co thin film nanomagnet[J]. Applied Physics Letters, 2000, 77(23): 3809-3911.
[4] Katine J A, Albert F J, Buhrman R A, Myers E B, Ralph D C. Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars[J]. Physical Review Letters, 2000, 84(14): 3149-3152.
[5] Kaka S, Pufall M R, Rippard W H. Spin transfer switching of spin valve nanopillars using nanosecond pulsed current[J]. Journal of Magnetism and Magnetic Materials, 2005, 286: 375-380.
[6] Bao Jin, Xu Xiaoguang, Jiang Yong. Current-induced magnetization switching in spin valves[J]. Acta Physical Sinica, 2009, 58(11): 7998.(in Chinese)
包瑾,徐晓光,姜勇. 自旋阀中电流诱导磁化翻转行为的研究[J],物理学报,2009,58(11),7998.
[7] Zhao H, Lyle A, Zhang Y, et al. Low writing energy and subnanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory[J]. Journal of Applied Physics, 2011, 109(7): 07C720.
[8] Lee J M, Lee C M, Ye L X, et al. Switching properties or MgO-based magnetic tunnel junction devices driven by spin-transfer torque in the nanosecond regime[J]. IEEE Transactions on magnetics, 2011, 47(3): 629.
[9] Jin Wei, Wan Zhenmao, Liu Yaowen. Nonlinear magnetization dynamics excited by the spin-transfer torque effect[J]. Acta Physical Sinica, 2011, 60(1): 017502.(in Chinese).
金伟,万振茂,刘要稳,自旋转移矩效应激发的非线性磁化动力学[J]. 物理学报,2011,60(1): 017502.
[10] Wan Langhui, Wei Yadong, Xi Dingping, et al. Spin-dependent transport through ferromagnet-magnetic scattering region-ferromagnet hybrid junction[J]. Journal of shenzhen university science and engineering, 2004, 21(1): 7-13.(in Chinese).
万浪辉,卫亚东,奚定平,等.磁导线-磁性散射区-磁导线系统的自旋输运[J]. 深圳大学学报,2004,21(1):7-13.
[11] Gabriel D, Chaves O, Georg W, et al. Micromagnetic study of spin transfer switching with a spin polarization tilted out of the free layer plane[J]. Journal of Applied Physics, 2015, 117(17), 17D705.
[12] Zhang X L, Zhang Z Z, Liu Y W, et al. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions[J]. Journal of Applied Physics, 2015, 117(17): 17A701.
[13] Su Yikun, Deng Yujun, Huang Xiangyu, et al. Preparation and characterization of Fe nanowire arrays[J]. Journal of shenzhen university science and engineering, 2013, 30(6): 617-622.(in Chinese).
苏轶坤,邓宇骏,黄湘愉,等.Fe纳米线的制备与表征[J]. 深圳大学学报,2013,30(6):617-622.
[14] Zhou Y, Zhang H, Liu Y W, et al. Macrospin and micromagnetic studies of tilted polarizer spin-torque nano-oscillators[J]. Journal of Applied Physics, 2012, 112(6): 063903.
[15] Huang H B, Ma X Q, Zhao C P, et al. Micromagnetic study of high-power spin-torque oscillator with perpendicular magnetization in half-metallic Heusler alloy spin valve nanopillar under external magnetic field[J]. Journal of Magnetism and Magnetic Materials, 2015, 373(105): 10-15.
[16] Maehara H, Kubota H, Suzuki Y, et al. High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junction[J]. Applied Physics Express, 2014, 7(2): 023003.
[17] Leem L, Harris J S. Magnetic coupled spin-torque devices for nonvolatile logic applications[J]. Journal of Applied Physics, 2009, 105(7): 07D102.
[18] Yao X F, Harms J, Lyle A, et al. Magnetic tunnel junction-based spintronic logic units operated by spin transfer torque[J]. IEEE Transactions on Nanotechnology, 2012, 11(1): 120.
[19] Bhowmik D, You L, Salahuddin S. Spin hall effect clocking of nanomagnetic logic without a magnetic field[J]. Nature Nanotechnology, 2015, 9(1): 59.
[20] Ikeda S, Miura K, Yamamoto H, et al. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction[J]. Nature Materials, 2012, 9(9): 721.
[21] Amiri P K, Zeng Z M, Langer J, et al. Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions[J]. Applied Physics Letters, 2011, 98(11): 112507.
[22] Tomasello R, Puliafito V, Azzerboni B, et al. Switching properties in magnetic tunnel junctions with interfacial perpendicular anisotropy: micromagnetic study[J], IEEE Transactions on Magnetics, 2014, 50(7): 7100305.
[23] Li Z, Zhang S, Diao Z, et al. Perpendicular spin torques in magnetic tunnel junctions[J]. Physical Review Letters, 2008, 100(24): 246602.

相似文献/References:

[1]唐亚楠,申梓刚,陈卫光,等.改性石墨烯纳米材料气敏特性的理论研究[J].深圳大学学报理工版,2015,32(4):365.[doi:10.3724/SP.J.1249.2015.04365]
 Tang Yanan,Shen Zigang,Chen Weiguang,et al.Theoretical study on gas sensitivity of modified graphene[J].Journal of Shenzhen University Science and Engineering,2015,32(6):365.[doi:10.3724/SP.J.1249.2015.04365]

备注/Memo

备注/Memo:
Received:2015-07-08;Accepted:2015-10-15
Foundation:National Natural Science Foundation of China(11204203, 61274089)
Corresponding author:Associate professor Xue Haibin.E-mail: xuehaibin@tyut.edu.cn
Citation:Guo Yuanyuan, Hao Jianlong, Xue Haibin, et al. Lower-current-density-induced magnetization switching in the CoFeB/MgO based magnetic tunnel junction[J]. Journal of Shenzhen University Science and Engineering, 2015, 32(6): 571-576.(in Chinese)
基金项目:国家自然科学基金资助项目(11204203,61274089)
作者简介:郭园园(1986—),女(汉族),山西省临汾市人,太原理工大学博士研究生.E-mail:guoyuanyuan815@163.com
引文:郭园园,蒿建龙,薛海斌,等.CoFeB/MgO磁隧道结的低电流密度磁矩翻转特性[J]. 深圳大学学报理工版,2015,32(6):571-576.
更新日期/Last Update: 2015-11-06