[1]赵鑫,张东方,刘进元.一种纳秒前沿的负高压脉冲产生电路[J].深圳大学学报理工版,2014,31(1):30-34.[doi:10.3724/SP.J.1249.2014.01030]
 Zhao Xin,Zhang Dongfang,and Liu Jinyuan.A design of negative high voltage nanosecond pulse circuit[J].Journal of Shenzhen University Science and Engineering,2014,31(1):30-34.[doi:10.3724/SP.J.1249.2014.01030]
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一种纳秒前沿的负高压脉冲产生电路()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第31卷
期数:
2014年第1期
页码:
30-34
栏目:
光电工程
出版日期:
2014-01-14

文章信息/Info

Title:
A design of negative high voltage nanosecond pulse circuit
文章编号:
20140104
作者:
赵鑫12 张东方3刘进元3
1) 西安交通大学电气工程学院,西安 710049
2) 西北电网有限公司,西安 710048
3) 深圳大学光电工程学院,深圳 518060
Author(s):
Zhao Xin12 Zhang Dongfang3 and Liu Jinyuan3
1) School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, P.R.China
2) Northwest China Grid Company Ltd, Xi’an 710048, P.R.China
3) College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
脉冲功率技术Marx发生器电子开关功率MOSFET负高压脉冲纳秒级前沿
Keywords:
pulse power technology Marx generator electronic switch power MOSFET negative high voltage pulse nanosecond rising time
分类号:
TM 89
DOI:
10.3724/SP.J.1249.2014.01030
文献标志码:
A
摘要:
Marx发生器是一种广泛应用的高压脉冲电源,由高储能密度、低电感的电容器和电子开关组成,利用电容充放电方式产生高压脉冲.本研究通过分析经典Marx发生器的充放电特性,提出一种基于功率金属氧化物半导体场效应管(metal-oxide-semiconductor field-effect transistor, MOSFET)的负高压电路设计方法.测试结果表明,该电路在所加直流电压为1 500 V时,能够产生幅度为2倍于直流供电电压,下降沿小于10 ns的负高压脉冲.
Abstract:
Marx generator is widely used in the high-voltage pulse generation which consists of electronic switches and capacitors with low inductance and high energy density. The high voltage pulse is generated while the capacitors charge and discharge through the electronic switches. The charging and discharging characteristics of classic Marx generator is simulated in this paper while the power metal-oxide-semiconductor field-effect transistors are used as the electronic switches. Tests show that the circuit can produce a negative high voltage pulse, the amplitude of which is twice that of the applied DC voltage of 1 500 V and the falling time is less than 10 ns.

参考文献/References:

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备注/Memo

备注/Memo:
Received:2013-09-23;Accepted:2013-12-09
Foundation:National High-Tech Research and Development Program of China (201***019)
Corresponding author:Professor Liu Jinyuan. E-mail: ljy@szu.edu.cn
Citation:Zhao Xin, Zhang Dongfang, Liu Jinyuan. A design of negative high voltage nanosecond pulse circuit [J]. Journal of Shenzhen University Science and Engineering, 2014, 31(1): 30-34.(in Chinese)
基金项目:国家高技术研究发展计划资助项目 (201***019)
作者简介:赵鑫(1984-),男(汉族),陕西省西安市人,西安交通大学博士研究生. E-mail: zhaoxin12345@163.com
引文:赵鑫,张东方,刘进元. 一种纳秒前沿的负高压脉冲产生电路[J]. 深圳大学学报理工版,2014,31(1):30-34.
更新日期/Last Update: 2014-01-08