[1]胡居广,汤华斌,李启文,等.近红外激光退火晶化CIGS薄膜研究[J].深圳大学学报理工版,2013,30(No.6(551-660)):623-628.[doi:10.3724/SP.J.1249.2013.06623]
 Hu Juguang,Tang Huabin,Li Qiwen,et al.Study on the structure of crystallized CIGS thin films by near infrared laser annealing[J].Journal of Shenzhen University Science and Engineering,2013,30(No.6(551-660)):623-628.[doi:10.3724/SP.J.1249.2013.06623]
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近红外激光退火晶化CIGS薄膜研究()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第30卷
期数:
2013年No.6(551-660)
页码:
623-628
栏目:
材料科学
出版日期:
2013-09-30

文章信息/Info

Title:
Study on the structure of crystallized CIGS thin films by near infrared laser annealing
文章编号:
20130612
作者:
胡居广汤华斌李启文李学金郑彬刘毅龙井华林晓东
1)深圳大学物理科学与技术学院,深圳 518060
2)深圳市传感器技术重点实验室, 深圳 518060
Author(s):
Hu Juguang Tang Huabin Li Qiwen Li Xuejin Zheng Bin Liu Yi Long Jinghua and Lin Xiaodong
1) College of Physical Science and Technology, Shenzhen University, Shenzhen 518060, P.R.China
2) Shenzhen Key Lab of Sensors Technology, Shenzhen 518060, P.R.China
关键词:
薄膜物理激光退火铜铟镓硒薄膜能量密度结晶压应力表面条纹
Keywords:
thin film physics laser annealing CuIn1-xGaxSe2 films energy density crystallization compressive stress surface stripes
分类号:
TM 914.4+2;TB 43
DOI:
10.3724/SP.J.1249.2013.06623
文献标志码:
A
摘要:
利用脉冲激光沉积法在石英基底上沉积铜铟镓硒薄膜为前驱物,采用波长1 064 nm的近红外脉冲激光在不同能量密度下对其进行退火晶化.对薄膜的光学特性、晶体结构和形貌等进行表征分析,结果表明,随着激光能量密度增加,铜铟镓硒薄膜结晶度增加,晶粒尺寸变大,压应力减小,禁带宽度增加.当激光能量密度为325 mJ/cm2时,薄膜的结晶度达最高值29.46%,晶粒尺寸达最大为15.4 nm,压应力最小,薄膜结晶质量最好,过低和过高的能量密度都不利于薄膜的结晶.同时分析了高能量密度时薄膜表面条纹的形成机理.
Abstract:
CuIn1-xGaxSe2(CIGS) films were deposited on quartz substrate by pulsed laser deposition as precursors and annealed by the 1 064 nm near infrared pulse laser at different energy density. The optical properties, microstructures, surface morphology were characterized with spectrophotometer, X-ray diffractometry (XRD), scanning electron microscopy (SEM) respectively. The results show that with the laser energy density increasing, the crystallinity of CIGS films increases; grain size becomes larger; compressive stress decreases; band-gap increases. When the laser energy density reaches 325 mJ/cm2, the crystallinity of films rises up to 29.46%; the grain size reaches the maximum 15.4 nm; the compressive stress is minimum. The crystallization quality is the best, and the crystallinity of film is bad at lower or higher energy density. In addition, the formation mechanism of stripes on film surface annealed at high energy density was analyzed.

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备注/Memo

备注/Memo:
Received:2013-05-31;Accepted:2013-08-20
Foundation:National Natural Science Foundation of China (61275125);Bureau of Science Technology & Information (JCYJ20120613112423982)
Corresponding author:Assistant professor Liu Yi. E-mail: liuy@szu.edu.cn
Citation:Hu Juguang,Tang Huabin,Li Qiwen, et al. Study on the structure of crystallized CIGS thin films by near infrared laser annealing[J]. Journal of Shenzhen University Science and Engineering, 2013, 30(6): 623-628.(in Chinese)
基金项目:国家自然科学基金资助项目(61275125);深圳市基础研究计划资助项目 (JCYJ20120613112423982)
作者简介:胡居广(1973-) ,男(汉族) ,江苏省徐州市人,深圳大学副教授、博士. E- mail: szhuok@163.com
引文:胡居广,汤华斌,李启文,等. 近红外激光退火晶化CIGS薄膜研究[J]. 深圳大学学报理工版,2013,30(6):623-628.
更新日期/Last Update: 2013-11-20