[1]曹建民,贺威,黄思文,等.NBTI界面电荷反馈引起器件寿命变化的数值分析[J].深圳大学学报理工版,2013,30(No.2(111-220)):144-149.[doi:10.3724/SP.J.1249.2013.02144]
 Cao Jianmin,He Wei,Huang Siwen,et al.Numerical analysis of device lifetime change caused by interface feedback under NBTI stress[J].Journal of Shenzhen University Science and Engineering,2013,30(No.2(111-220)):144-149.[doi:10.3724/SP.J.1249.2013.02144]
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NBTI界面电荷反馈引起器件寿命变化的数值分析()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第30卷
期数:
2013年No.2(111-220)
页码:
144-149
栏目:
电子与信息科学
出版日期:
2013-03-18

文章信息/Info

Title:
Numerical analysis of device lifetime change caused by interface feedback under NBTI stress
作者:
曹建民贺威黄思文张旭琳
深圳大学电子科学与技术学院, 深圳 518060
Author(s):
Cao Jianmin He Wei Huang Siwen and Zhang Xulin
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
半导体技术 MOS器件 负偏压温度不稳定性 计算机辅助设计 界面反馈 半导体器件寿命
Keywords:
semiconductor technology metallic oxide semiconductor field effect transistor negative bias temperature instability computer aided design interface feedback semiconductor device lifetime
分类号:
TN 386.1;TN 306
DOI:
10.3724/SP.J.1249.2013.02144
文献标志码:
A
摘要:
提出一种用二维器件数值模拟和负偏压温度不稳定性(negative bias temperature instability,NBTI)模型联合计算的方法,分析NBTI效应产生的界面电荷对pMOS器件栅氧化层电场和沟道空穴浓度的反馈作用.通过大量计算和比对分析现有实验得出:当NBTI效应产生较多的界面电荷时,由于界面电荷反馈,pMOS器件的NBTI退化将有一定程度的减小.这种退化减小是一种新的退化饱和机制,对不同类型器件的寿命具有不同的影响.在低NBTI器件中,界面反馈对器件寿命曲线的变化影响不大,器件寿命曲线趋向满足指数变化规律.在高NBTI器件中,界面反馈使得寿命曲线变化基本满足幂指数变化规律.
Abstract:
A joint calculation method of 2D device simulation and negative bias temperature instability (NBTI) equations is proposed in this paper. The proposed method can be used to analyze the feedback of the created interface charge by NBTI effects on pMOS device gate oxide electric field and channel hole concentration.The analysis results show that when the interface charge of NBTI is generated to a certain extent, the degradation is decreased due to the interface feedback.The feedback of this interface charge to make NBTI degradation decreases is a new kind of saturation mechanism of degradation, which has a different influence on different types of devices.In the low NBTI devices, the interface feedback has little effect on the device lifetime curve.The device lifetime curve tends to meet the exponential variation; while in the high NBTI devices, the interface feedback makes the life curve of the device to basically meet the power law variation.

参考文献/References:

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备注/Memo

备注/Memo:
Received:2012-10-24;Revised:2013-02-09
Foundation:National Natural Science Foundation of China (11109052); Shenzhen Science and Technology Development Funds, China (201005280558A)
Corresponding author:Senior engineer Cao Jianmin.E-mail: jmcao@szu.edu.cn
Citation:Cao Jianmin, He Wei, Huang Siwen, et al. Numerical analysis of device lifetime change caused by interface feedback under NBTI stress[J]. Journal of Shenzhen University Science and Engineering, 2013, 30(2): 144-149.(in Chinese)

基金项目:国家自然科学基金资助项目(11109052);深圳市科技发展计划资助项目(201005280558A)
作者简介:曹建民(1964-),男(汉族),陕西省榆林市人,深圳大学高级工程师、博士.E-mail:jmcao@szu.edu.cn
引文:曹建民,贺威,黄思文,等.NBTI界面电荷反馈引起器件寿命变化的数值分析[J]. 深圳大学学报理工版,2013,30(2):144-149.
更新日期/Last Update: 2013-03-19