[1]武红磊,郑瑞生,闫征,等.温度场分布对氮化铝晶体生长习性的影响[J].深圳大学学报理工版,2012,29(No.6(471-580)):487-491.[doi:10.3724/SP.J.1249.2012.06487]
 WU Hong-lei,ZHENG Rui-sheng,YAN Zheng,et al.Effect of temperature distribution on growth habit of AlN crystal[J].Journal of Shenzhen University Science and Engineering,2012,29(No.6(471-580)):487-491.[doi:10.3724/SP.J.1249.2012.06487]
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温度场分布对氮化铝晶体生长习性的影响()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第29卷
期数:
2012年No.6(471-580)
页码:
487-491
栏目:
光电工程
出版日期:
2012-11-30

文章信息/Info

Title:
Effect of temperature distribution on growth habit of AlN crystal
作者:
武红磊郑瑞生闫征李萌萌郑伟
深圳大学光电工程学院,光电子器件与系统教育部重点实验室,广东省光电子器件与系统重点实验室, 深圳 518060
Author(s):
WU Hong-lei ZHENG Rui-sheng YAN Zheng LI Meng-meng and ZHENG Wei
College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Key Laboratory of Optoelectronic Devices and Systems of Guangdong Province, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
半导体材料氮化铝升华法非极化温度场晶体生长
Keywords:
semiconductor materials aluminum nitride sublimation non-polarization temperature distribution crystal growth
分类号:
O 782
DOI:
10.3724/SP.J.1249.2012.06487
文献标志码:
A
摘要:
研究升华法制备氮化铝晶体过程中,生长区域温度场分布对晶体生长习性的影响.结果表明,当升华区与结晶区之间的温差较大时,氮化铝晶体的生长方向为c轴方向,显露面为c面;反之,温差较小时,氮化铝晶体的生长方向为与c轴垂直的a轴方向,显露面为m面.同时,生长区域温度场分布还影响晶体的生长尺寸和质量. 在自行设计的双区电阻加热晶体生长装置中,通过精确控制升华区与结晶区之间的温度场,实现厘米级m面非极性氮化铝单晶体的制备,并对样品进行测试分析.
Abstract:
The effect of temperature distribution on AlN sublimation growth union to growth habit has been studied in this paper. With the larger temperature difference between sublimation region and crystalline region, the growth direction of AlN was along c-axis. On the contrary, the growth direction was along a-axis. Meantime, the temperature distribution also had an effect on crystal size and quality. The nonpolar m-plane AlN single crystals with the size about 1cm had been grown by sublimation and characterized. The growth furnace was designed by ourselves, this device contained two resistance heaters, heating sublimation region and crystalline region, respectively.

参考文献/References:

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相似文献/References:

[1]郑瑞生,武红磊.氮化铝体单晶生长技术研究进展[J].深圳大学学报理工版,2010,27(4):433.
 ZHENG Rui-sheng and WU Hong-lei.Development of bulk AlN single-crystal growth technology[J].Journal of Shenzhen University Science and Engineering,2010,27(No.6(471-580)):433.
[2]武红磊,郑瑞生,孟姝,等.碳硅共掺氮化铝的p型掺杂效率研究[J].深圳大学学报理工版,2011,28(No.2(095-188)):109.
 WU Hong-lei,ZHENG Rui-sheng,MENG Shu,et al.Research on p-type doping efficiency in C∶Si codoped AlN[J].Journal of Shenzhen University Science and Engineering,2011,28(No.6(471-580)):109.

备注/Memo

备注/Memo:
Received:2012-09-16;Accepted:2012-11-05
Foundation:National Natural Science Foundation of China (61136001); National Basic Research Program of China (2010CB635115)
Corresponding author:Professor ZHENG Rui-sheng. E-mail: rszheng@szu.edu.cn
Citation:WU Hong-lei, ZHENG Rui-sheng, YAN Zheng, et al. Effect of temperature distribution on growth habit of AlN crystal[J]. Journal of Shenzhen University Science and Engineering, 2012, 29(6): 487-491.(in Chinese)
基金项目:国家自然科学基金重点资助项目(61136001);国家重点基础研究发展计划资助项目(2010CB635115)
作者简介:武红磊(1981-),男(汉族),河南省驻马店市人,深圳大学讲师、博士. E-mail:hlwu@szu.edu.cn
引文:武红磊,郑瑞生,闫征,等. 温度场分布对氮化铝晶体生长习性的影响[J]. 深圳大学学报理工版,2012,29(6):487-491.
更新日期/Last Update: 2012-11-30