[1]范平,池京容,梁广兴,等.铜铟镓硒薄膜的四元叠层法制备与表征[J].深圳大学学报理工版,2012,29(No.2(095-188)):118-122.[doi:10.3724/SP.J.1249.2012.02118]
 FAN Ping,CHI Jing-rong,LIANG Guang-xing,et al.Preparation and characterization of CIGS thin films by depositing quaternary layers[J].Journal of Shenzhen University Science and Engineering,2012,29(No.2(095-188)):118-122.[doi:10.3724/SP.J.1249.2012.02118]
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铜铟镓硒薄膜的四元叠层法制备与表征()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第29卷
期数:
2012年No.2(095-188)
页码:
118-122
栏目:
光电工程
出版日期:
2012-03-23

文章信息/Info

Title:
Preparation and characterization of CIGS thin films by depositing quaternary layers
作者:
范平池京容梁广兴郑壮豪张东平蔡兴民 李定梅陈天宝
深圳大学物理科学与技术学院,薄膜物理与应用研究所,深圳市传感器技术重点实验室,深圳 518060
Author(s):
FAN PingCHI Jing-rong LIANG Guang-xing ZHENG Zhuang-hao ZHANG Dong-ping CAI Xing-min LI ding-mei and CHEN Tian-bao
College of Physical Science and Technology, Institute of Thin Film Physics and Applications,
Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
太阳电池 薄膜 离子束 热蒸发 晶体结构 光学性能 电学性能
Keywords:
solar cells thin films ion beams thermal evaporation crystal structure optical properties electric properties
分类号:
TM 914.4+2; TB 43
DOI:
10.3724/SP.J.1249.2012.02118
文献标志码:
A
摘要:
采用热蒸发沉积Ga、离子束溅射沉积Cu、In和Se,在BK7玻璃上形成Ga/Gu/In/Se四元叠层,在同一高真空环境下对四元叠层进行退火热处理,制备得到铜铟镓硒(CIGS)薄膜太阳电池吸收层材料CIGS薄膜. 通过X射线衍射仪、能谱仪、扫描电子显微镜、分光光度计及四探针,测量材料的结构、组分、形貌以及光电特性.结果表明,通过精确控制热蒸发蒸镀Ga膜料的时间,实现在CuInSe2(CIS)薄膜上掺杂Ga元素,制备的CIGS薄膜均呈黄铜矿结构,当Ga的原子数分数x(Ga)=3.96%~9.26%时,衍射峰较强,结晶度较高,其中x(Ga)=4.70 %,N(Ga)/(N(Ga)+N(In))=0.16时,颗粒明显,大小均匀平整,对应最大晶粒尺寸约为61.01 nm,光学带隙为1.18 eV.
Abstract:
Cu(In, Ga)Se2(CIGS) thin films used as the absorbing layer in solar cell were successfully fabricated by thermal evaporating Ga elements and ion beam sputtering Cu, In, Se continuously on BK7 glass substrates. Subsequently, quaternary layers were annealed in the same vacuum chamber and under the same vacuum environment. The thin films were characterized with X-ray diffractometry(XRD), X-ray dispersive spectroscory(EDS), scanning electron microscopy(SEM), spectrophotometer and four-point probe technique in order to study the microstructures, composition,surface morphology, optical and electrical properties, respectively. The results show that the(CuInSe2)CIS thin films are Ga doped. All the thin films are mainly of chalcopyrite structure. The diffraction peak intensity is relatively strong when the atomic percentage of Ga ranges from 3.96% to 9.26% with good crystalline quality. When the atomic percentage of Ga is 4.70%, the grain size is uniform with relatively smooth surface. The maximum crystalline of the sample doped with Ga of 4.70% is about 61.01 nm and its optical bandgap is 1.18 eV.

参考文献/References:

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备注/Memo

备注/Memo:
Received:2011-05-30;Revised:2011-06-13;Accepted:2011-12-19
Foundation:Natural Science Foundation of Guangdong Province(7009409)
Corresponding author:Professor FAN Ping.E-mail:fanping@szu.edu.cn
Citation:FAN Ping,CHI Jing-rong,LIANG Guang-xing,et al. Preparation and characterization of CIGS thin films by depositing quaternary layers[J]. Journal of Shenzhen University Science and Engineering, 2012, 29(2): 118-122.(in Chinese)
基金项目:广东省自然科学基金资助项目(7009409);深圳市基础研究计划重点项目资助项目(JC201005250053A)
作者简介:范平(1963-),男(汉族),福建省永定县人,深圳大学教授.E-mail:fanping@szu.edu.cn
引文:范平,池京容,梁广兴,等. 铜铟镓硒薄膜的四元叠层法制备与表征[J]. 深圳大学学报理工版,2012,29(2):118-122.
更新日期/Last Update: 2012-03-28