[1]武红磊,郑瑞生,孟姝,等.碳硅共掺氮化铝的p型掺杂效率研究[J].深圳大学学报理工版,2011,28(No.2(095-188)):109-112.
 WU Hong-lei,ZHENG Rui-sheng,MENG Shu,et al.Research on p-type doping efficiency in C∶Si codoped AlN[J].Journal of Shenzhen University Science and Engineering,2011,28(No.2(095-188)):109-112.
点击复制

碳硅共掺氮化铝的p型掺杂效率研究()
分享到:

《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第28卷
期数:
2011年No.2(095-188)
页码:
109-112
栏目:
光电工程
出版日期:
2011-03-20

文章信息/Info

Title:
Research on p-type doping efficiency in C∶Si codoped AlN
文章编号:
1000-2618(2011)02-0109-04
作者:
武红磊1郑瑞生1孟姝1黄俊毅2
1)深圳大学光电工程学院,深圳 518060
2)华南师范大学光电子材料与技术研究所,广州 510631
Author(s):
WU Hong-lei1ZHENG Rui-sheng1MENG Shu1and HUANG Jun-yi2
1)College of Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,P.R.China
2)Institute of Opto-Electronic Materials and Technology,South China Normal University,Guangzhou 510631,P.R.China
关键词:
半导体材料掺杂第一性原理计算氮化铝受主能级电阻率
Keywords:
semiconductor materialsdopingab initio calculationAlNacceptor levelresistivity
分类号:
O 471.5; O 474
文献标志码:
A
摘要:
采用碳受主和硅施主共掺杂的方法制备低电阻率p型氮化铝晶体.通过第一性原理计算预测碳硅共掺氮化铝的p型掺杂效率及碳硅合适掺杂比.计算结果表明,在氮化铝中由碳硅共掺形成的Cn-Si络合物(n = 1,2,3,4)可以稳定存在,特别是在C2-Si络合物中碳受主电离能仅有0.19 eV,比单个碳受主低0.28 eV.利用碳硅共掺方法,在实验上制备出空穴浓度为1.4×1014 cm-3、迁移率为52 cm2/(V·s)的p型氮化铝晶体.
Abstract:
The codoping method with C as the acceptor and Si as the reactive donor,to fabricate low-resistivity p-type AlN crystals,was proposed.Ab initio calculations were performed to investigate p-type efficiency in C:Si codoped AlN and the doping concentration ratio of C to Si.The calculations suggest that the Cn-Si (n=1,2,3,and 4) complexes are stable and favorable.The calculated activation energy for C2-Si is only 0.19 eV,0.28 eV lower than that for single C acceptor.The p-type AlN crystal with the hole density of 1.4×1014 cm-3 and mobility of 52 cm-2/(V·s) has been obtained.

参考文献/References:

[1]郑瑞生,武红磊.氮化铝体单晶生长技术研究进展[J].深圳大学学报理工版,2010,27(4):433-439.(英文版)
[2]Stampfl C,Van de Walle C G.氮化铝中本征缺陷、杂质和络合物的理论计算[J].物理评论B,2002,65(15):155212-1-155212-10.(英文版)
[3]Van de Walle C G,Neugebauer J.缺陷杂质的第一性原理计算:三族氮化物[J].应用物理,2004,95(8):3851-3879.(英文版)
[4]武红磊,郑瑞生,孟姝,等.碳硅共掺杂制备p型氮化铝的方法[J].应用物理,2010,108(5):053715-1-053715-4.(英文版)
[5]Taniyasu Y,Kasu M,Makimoto T.波长210 nm的氮化铝发光二极管[J].自然,2006,144:325-328.(英文版)
[6]Taniyasu Y,Kasu M.氮化铝深紫外p-n结发光二极管[J].宝石及相关材料,2008,17(7-10):1273-1277.(英文版)
[7]WU R Q,SHEN L,YANG M,等.通过镁氧共掺杂增大氮化铝中空穴浓度的第一性原理研究[J].物理评论B,2008,77(7):073203-1-073203-4.(英文版)
[8]Segall M D,Lindan P J D,Probert M J,等.第一性原理模拟:思路、说明和CASTEP代码[J].物理:凝聚态材料,2002,14(11):2717-2744.(英文版)
[9]Van de Walle C G,Neugebauer J.关于缺陷杂质的第一性原理计算:III族氮化物[J].应用物理,2004,95(8):3851-3879.(英文版)


[1]ZHENG Rui-sheng,WU Hong-lei.Development of bulk AlN single-crystal growth technology[J].Journal of Shenzhen University Science and Engineering,2010,27(4):433-439.
[2]Stampfl C,Van de Walle C G.Theoretical investigation of native defects,impurities,and complexes in aluminum nitride[J].Physical Review B,2002,65(15):155212-1-155212-10.
[3]Van de Walle C G,Neugebauer J.First-principles calculations for defects and impurities:Applications to III-nitrides[J].Journal of Applied Physics,2004,95(8):3851-3879.
[4]WU Hong-lei,ZHENG Rui-sheng,MENG Shu,et al.C and Si codoping method for p-type AlN[J].Journal of Applied Physics,2010,108(5):053715-1-053715-4.
[5]Taniyasu Y,Kasu M,Makimoto T.An aluminium nitride light-emitting diode with a wavelength of 210 nanometres[J].Nature,2006,144:325-328.
[6]Taniyasu Y,Kasu M.Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes[J].Diamond & Related Materials,2008,17(7-10):1273-1277.
[7]WU R Q,SHEN L,YANG M,et al.Enhancing hole concentration in AlN by Mg:O codoping:Ab initio study[J].Physical Review B,2008,77(7):073203-1-073203-4.
[8]Segall M D,Lindan P J D,Probert M J,et al.First-principles simulation:ideas,illustrations and the CASTEP code[J].Journal of Physics:Condensed Matter,2002,14(11):2717-2744.
[9]Van de Walle C G,Neugebauer J.First-principles calculations for defects and impurities:Applications to III-nitirdes[J].Journal of Applied Physics,2004,95(8):3851-387.

相似文献/References:

[1]郑瑞生,武红磊.氮化铝体单晶生长技术研究进展[J].深圳大学学报理工版,2010,27(4):433.
 ZHENG Rui-sheng and WU Hong-lei.Development of bulk AlN single-crystal growth technology[J].Journal of Shenzhen University Science and Engineering,2010,27(No.2(095-188)):433.
[2]武红磊,郑瑞生,闫征,等.温度场分布对氮化铝晶体生长习性的影响[J].深圳大学学报理工版,2012,29(No.6(471-580)):487.[doi:10.3724/SP.J.1249.2012.06487]
 WU Hong-lei,ZHENG Rui-sheng,YAN Zheng,et al.Effect of temperature distribution on growth habit of AlN crystal[J].Journal of Shenzhen University Science and Engineering,2012,29(No.2(095-188)):487.[doi:10.3724/SP.J.1249.2012.06487]
[3]周晓明,张培新,刘剑洪,等.Fe3+、Co2+、Ni2+掺杂TiO2 纳米粉体的微波水热合成研究[J].深圳大学学报理工版,2004,21(3):257.
 ZHOU Xiao-ming,ZHANG Pei-xin,LIU Jian-hong,et al.The hydrothermal synthesis in terms of microwave of the TiO2 nanometer powder mixed with Fe3+,Co2+ and Ni2+[J].Journal of Shenzhen University Science and Engineering,2004,21(No.2(095-188)):257.

备注/Memo

备注/Memo:
收稿日期:2010-06-20;修回日期:2011-02-24
基金项目:国家重点基础研究发展计划资助项目(2010CB635115);国家自然科学基金资助项目(60576005)
作者简介:武红磊(1981-),男(汉族),河南省驻马店市人,深圳大学博士.E-mail:wuhongleiz@sohu.com
通讯作者:郑瑞生(1957-),男(汉族),深圳大学教授、博士生导师.E-mail:rszheng@szu.edu.cn
更新日期/Last Update: 2011-03-28