[1]刘福生,敖伟琴,罗锐敏,等.Hf掺杂BiSbTe3结构与热电性能研究[J].深圳大学学报理工版,2008,25(3):299-302.
 LIU Fu-sheng,AO Wei-qin,LUO Rui-min,et al.Structure and thermoelectrical properties of Hf doped BiSbTe3 compounds[J].Journal of Shenzhen University Science and Engineering,2008,25(3):299-302.
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Hf掺杂BiSbTe3结构与热电性能研究()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第25卷
期数:
2008年3期
页码:
299-302
栏目:
材料科学
出版日期:
2008-07-31

文章信息/Info

Title:
Structure and thermoelectrical properties of Hf doped BiSbTe3 compounds
文章编号:
1000-2618(2008)03-0299-04
作者:
刘福生敖伟琴罗锐敏冯学文张文华李均钦
深圳大学材料学院,深圳市特种功能材料重点实验室,深圳 518060
Author(s):
LIU Fu-shengAO Wei-qinLUO Rui-minFENG Xue-wenZHANG Wen-huaand LI Jun-qin
College of Materials Science and Engineering,Shenzhen Key Laboratory of Special Functional Materials,Shenzhen University,Shenzhen 518060,P.R China
关键词:
热电性能Bi2Te3Seebeck系数功率因子
Keywords:
thermoelectricHafniumBismuth Telluriumseebeck coefficientpower factor
分类号:
TB 39
文献标志码:
A
摘要:
以高纯Hf、Bi、Sb和Te为原料,在1 000℃下,经10 h氩气保护熔融状态下反应,冷却球磨制粉,再在氮气保护下进行热压(450℃,20 MPa),成功制备出一系列不同Hf掺杂量的Hf2x(Bi,Sb)2-2xTe3化合物.X射线粉末衍射Rietveld分析说明,Hf在结构中占据6c晶位,以替代(Bi,Sb)的形式进入晶格.Hf掺杂引起BiSbTe3的Seebeck系数增大,电导率降低.功率因子在375 K时达最大值526 μW/mK2
Abstract:
A series of Hf-doped of Hf2x(Bi,Sb)2-2xTe3 compounds were prepared at 1000 ℃ for 6 h by the reaction of the high purity metals Hf,Bi,Sb and Te in a sealed quartz tube under an argon gas environment,followed by a powder metallurgy hot-press process (450 ℃,20 MPa) under the protection of flowing nitrogen.X-ray powder diffraction Rietveld refinement shows that Hf substitutes Bi and Sb in the structure of(Bi,Sb)2Te3 and occupies the 6c crystal position.The thermoelectric property measurements show that the Seebeck coefficient increases and the electrical conductivity slightly decreases with doping of Hf.The highest power factor α2σ is 526 μW/mK2 at 375 K for x=0.02.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2007-11-20;修回日期:2008-05-20
基金项目:深圳大学科研启动基金资助项目(200618)
作者简介:刘福生(1970-),男(汉族),江西省宁都县人,深圳大学教授.E-mail:fsliu@szu.edu.cn
更新日期/Last Update: 2008-08-12