[1]曹均凯,王国栋,李小兵,等.基于2.5 Gbit/s应用长波长雪崩光电二极管[J].深圳大学学报理工版,2007,24(1):69-74.
 CAO Jun-kai,WANG Guo-dong,LI Xiao-bing,et al.A long wavelength avalanche photodiode for 2.5 Gbit/s applications[J].Journal of Shenzhen University Science and Engineering,2007,24(1):69-74.
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基于2.5 Gbit/s应用长波长雪崩光电二极管()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第24卷
期数:
2007年1期
页码:
69-74
栏目:
出版日期:
2007-01-30

文章信息/Info

Title:
A long wavelength avalanche photodiode for 2.5 Gbit/s applications
文章编号:
1000-2618(2007)01-0069-06
作者:
曹均凯王国栋李小兵李连城张 伟
深圳飞通光电子技术有限公司,深圳 518057
Author(s):
CAO Jun-kaiWANG Guo-dongLI Xiao-bingLI Lian-chengand ZHANG Wei
Shenzhen Photon Technology Co Ltd,Shenzhen 518057,P.R.China
关键词:
雪崩光电二极管雪崩倍增倍增因子光电探测器光纤通信
Keywords:
avalanche photodiode(APD)avalanche multiplication effectmultiplication factorphotodetectoroptical fiber communication
分类号:
TN 312+.4;TN 312+.7
文献标志码:
A
摘要:
设计并制作一种基于2.5 Gbit/s应用的分离吸收区和倍增区结构的InGaAs/InP 雪崩光电二极管(avalanche photodiode,APD),该APD具有低击穿电压VBR(典型值为40 V)和低暗电流(反偏电压为0.9 VBR时典型值为1 nA)的显著特点,适合低工作电压的应用场合,如小型化的SFP和SFF光通信模块.组件测试结果表明,该APD具有高的饱和光功率和灵敏度,适用于2.5 Gbit/s及以下光通信及测量系统中对1310 nm/1550 nm波长光的探测.
Abstract:
A Planar InGaAs/InP avalanche photodiode(APD) was developed. With breakdown voltage as low as 40 V and dark current as low as InA at 0.9 VBR,the APD is applicable for low voltage applications such as SFP and SFF optical fibre communication modules. The module tests show that the APD features high sensitivity and saturation optical power. The device is thus suitable for 2.5 Gbit/s applications in optical communication,and can be used to detect light wave with wavelength 1 310 nm/1 550 nm.

参考文献/References:

[1]Peng Sun,Majeed M Hayat,Bahaa E A Saleh,等.雪崩光电二极管中增益和建立时间的统计相关性及对接收机性能的影响[J].光波技术学报,2006,24(2):755-768(英文版).
[2]Yegao G Xiao,M Jamal Deen.用随机近似法建立用于InP-InGaAs雪崩光电二极管的二维增益轮廓模型[J].IEEE 量子电子学报,1999,35(12):1853-1862(英文版).
[3]Ng J S,Tan C H,David J P R,等. In0.53Ga0.47As中碰撞离化系数的电场依赖关系[J].IEEE 电子器件学报,2003,50(4):901-905(英文版).
[4]Majeed M Hayat,Oh-Hyun Kwon,Yi Pan,等.薄雪崩光电二极管的增益-带宽特性[J].IEEE 电子器件学报,2002,49(5):770-781(英文版).
[5]Bongyong Lee,Hongil Yoon,Kyung Sook Hyun,等.用于光接收平面 InP/InGaAs 雪崩光电二极管生产变化研究[J].微电子学杂志,2004,35(2004):635-640(英文版).
[6]Jihoun Jung,Yong Hwan Kwon,Kyung Sook Hyun,等.具有凹槽腐蚀的平面 InP-InGaAs 雪崩光电二极管的可靠性[J].IEEE 光子学技术学报,2002,14(8):1160-1162(英文版).
[7]Jian Wei,Chris Dries J,Hongsheng Wang,等.10 Gb/s长波长浮置保护环 InGaAs-InP 雪崩光电二极管的优化[J].IEEE 光子学技术学报,2002,14(7):997-979(英文版).
[8]Wang S,Hurst J B,Ma F,等.在InP衬底上生长的低噪声碰撞离化能带工程雪崩光电二极管[J].IEEE 光子学技术学报,2002,14(12):1722-1724(英文版).
[9] WANG Shu-ling,MA Feng,LI Xiao-wei,等.“中心井”倍增区超低噪声雪崩光电二极管[J].IEEE 量子电子学报,2003,39(2):375-378(英文版).
[10]Kang Y,Mages P,Clawson A R,等.具有低噪声性能熔溶 InCaAs-Si 雪崩光电二极管[J].IEEE 光子学技术学报,2002,14(11):1593-1595(英文版).
[11]Peter Ossieur,Xing-zhi QIU,Johan Bauwelinck,等. 用雪崩光电二极管的突发模式接收的灵敏度补偿计算[J].光波技术学报,2003,21(11):2565-2575(英文版).
[12]Kyung-Sook Hyun,Chan-Yong Park.具有p-i-n倍增层结构的InP/InGaAs 雪崩光电二极管击穿特性[J].应用物理学报,1997,81(2):974-983(英文版).
[13]曹均凯,王国栋,镇 磊,等.基于10 Gbit/s应用长波长光电二极管[J].深圳大学学报理工版,2005,22(4):319-323.
[1]Peng Sun,Majeed M Hayat,Bahaa E A Saleh,et al.Statistical correlation of gain and buildup time in APDs and its effects on receiver performance[J].J Lightwave Technology,2006,24(2):755-768.
[2]Yegao G Xiao,M Jamal Deen.Modeling of two-dimensional gain profiles for InP-InGaAs avalanche photodiodes with a stochastic approach[J].IEEE J of Quantum Electronics,1999,35(12):1853-1862.
[3]Ng J S,Tan C H,David J P R,et al.Field dependence of impact ionization coefficients in In0.53Ga0.47As[J].IEEE Transactions on Electronic Devices,2003,50(4):901-905.
[4]Majeed M Hayat,Oh-Hyun Kwon,Yi Pan,et al.Gain-bandwidth characteristics of thin avalanche photodiodes[J].IEEE Transactions on Electronic Devices,2002,49(5):770-781.
[5]Bongyong Lee,Hongil Yoon,Kyung Sook Hyun,et al.Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers[J].Microelectronics Journal,2004,35(2004):635-640.
[6]Jihoun Jung,Yong Hwan Kwon,Kyung Sook Hyun,et al.Reliability of planar InP-InGaAs avalanche phodiodes with recess etching[J].IEEE Photonics Technology Letter,2002,14(8):1160-1162.
[7]Jian Wei,Chris Dries J,Hongsheng Wang,et al.Optimization of 10 Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes[J].IEEE Photonics Technology Letter,2002,14(7):997-979.
[8]Wang S,Hurst J B,Ma F,et al.Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates[J].IEEE Photonics Technology Letter,2002,14(12):1722-1724.
[9] WANG Shu-ling,MA Feng,LI Xiao-wei,et al.Ultra-low noise avalanche photodiodes with a “centered-well” multiplication region[J].IEEE J Quantum Electronics,2003,39(2):375-378.
[10]Kang Y,Mages P,Clawson A R,et al. Fused InCaAs-Si avalanche photodiodes with low-noise performances[J].IEEE Photonics Technology Letter,2002,14(11):1593-1595.
[11]Peter Ossieur,Xing-zhi QIU,Johan Bauwelinck,et al. Sensitivity penalty calculation for burst-mode receivers using avalanche photodiodes[J].J Lightwave Technology,2003,21(11):2565-2575.
[12]Kyung-Sook Hyun,Chan-Yong Park. Breakdown characteristics in InP/InGaAs avalanche photodiodes with p-i-n multiplication layer structure[J].J Applied physics,1997,81(2):974-983.
[13]CAO Jun-kai,WANG Guo-dong,ZHEN Lei,et al. A long wavelength photodiode for 10 Gbit/s applications[J].Journal of Shenzhen University Science and Engineering,2005,22(4):219-223(in Chinese).

备注/Memo

备注/Memo:
收稿日期:2006-10-17;修回日期:2006-12-21
作者简介:曹均凯(1963-),男(汉族),四川省南充市人,深圳飞通光电技术有限公司高级工程师. E-mail:junkai_cao@neophotonics.com.cn
更新日期/Last Update: 2007-12-09