[1]舒启清,李向东.电子隧道贯穿电场中薄势垒的时间[J].深圳大学学报理工版,1997,14(4):1-6.
 Shu Qiqing and Li Xiangdong.Time of Electron Tunneling through Thin Barrier under Electric Field[J].Journal of Shenzhen University Science and Engineering,1997,14(4):1-6.
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电子隧道贯穿电场中薄势垒的时间()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第14卷
期数:
1997年4期
页码:
1-6
栏目:
电子与信息科学
出版日期:
1997-12-30

文章信息/Info

Title:
Time of Electron Tunneling through Thin Barrier under Electric Field
作者:
舒启清李向东
深圳大学应用物理系,深圳 518060
Author(s):
Shu Qiqing and Li Xiangdong
Dept. of Applied Physics, Shenzhen University, Shenzhen 518060, P. R. China
分类号:
O 441.3
摘要:
给出了在矩形势垒区存在电场作用时,隧穿电子波函数的形式解特别是对于势垒很薄且电场为临界场的情形得到了波函数的具体形式,用它们计算了电子隧穿过程的相位时间和停延时间,并对两种隧穿时间模型作了比较。
Abstract:
A formal solution for the wave functions of the tunneling electrons through a rectangular barrier under the electric field is given. In particular for the thin barrier under the critical electric field the detailed wave functions are obtained, and thus the phase time and the dwell time of the tunneling electron are calculated. The two tunneling time models are compared with each other.
更新日期/Last Update: 2016-03-15