[1]奚定平,符名培.能带的立方对称哈密顿量对零禁带半导体材料的动力学介电常数的影响[J].深圳大学学报理工版,1989,(1-2):46-53.
 Xi Dingping,Fu Mingpei.Contribution of the Cubic Term of Energy Band Hamiltonian to the Dielectric Function in Zero Gap Semiconductors[J].Journal of Shenzhen University Science and Engineering,1989,(1-2):46-53.
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能带的立方对称哈密顿量对零禁带半导体材料的动力学介电常数的影响()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
期数:
1989年1-2期
页码:
46-53
栏目:
环境与能源
出版日期:
1989-06-30

文章信息/Info

Title:
Contribution of the Cubic Term of Energy Band Hamiltonian to the Dielectric Function in Zero Gap Semiconductors
作者:
奚定平1符名培2
(1)深圳大学光电技术工程系
(2)桂林电子工业学院
Author(s):
Xi Dingping 1Fu Mingpei2
文献标志码:
A
摘要:
本文讨论了零禁带半导体材料的能带立方对称哈密顿量时动力学介电常数的影响,用了微扰论的方法将立方对称项看成微扰项进行计算,结果表明:立方对称项的一阶微扰和高阶微扰计算不改变零禁带半导体的介电常数奇异性质。修正量在5 ~10%之间,其大小视材料而定.
Abstract:
Contribution of the cubic term of emery band Hamiltonian to the dynamic dielectric function in zero gap semiconductors has been calculated with the perturbation method. The calculation shows that the first order and the higher order perturbations of he cubic term or the Hamiltonian do not change the singularity of the dielectric function of the zero gap semiconductors. The quantative quotative correction to the dielectric function is about 5-10%for various materials
更新日期/Last Update: 2016-05-10