[1]郑瑞生,武红磊.氮化铝体单晶生长技术研究进展[J].深圳大学学报理工版,2010,27(4):433-439.
 ZHENG Rui-sheng and WU Hong-lei.Development of bulk AlN single-crystal growth technology[J].Journal of Shenzhen University Science and Engineering,2010,27(4):433-439.
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氮化铝体单晶生长技术研究进展()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第27卷
期数:
2010年4期
页码:
433-439
栏目:
材料科学
出版日期:
2010-10-31

文章信息/Info

Title:
Development of bulk AlN single-crystal growth technology
文章编号:
1000-2618(2010)04-0433-07
作者:
郑瑞生武红磊
深圳大学光电工程学院,深圳 518060
Author(s):
ZHENG Rui-sheng and WU Hong-lei
College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R.China
关键词:
半导体材料晶体生长氮化铝单晶体宽禁带半导体物理气相沉积
Keywords:
semiconductor materialscrystal growthaluminum nitridesingle crystalswide-bandgap semiconductorphysical vapor deposition
分类号:
O 782
文献标志码:
A
摘要:
评述氮化铝体单晶生长技术中常用的金属铝直接氮化法、溶解生长法、氢化物气相外延法和物理气相传输法.指出氢化物气相外延法和物理气相传输法是前景看好的生长氮化铝体单晶方法.介绍本课题组对物理气相传输法的一些改进.认为生长大尺寸氮化铝单晶体的研究将集中在精确控制生长条件、选择合适的坩埚材料、优化制备工艺和制备优质氮化铝籽晶等方面.
Abstract:
The research on bulk AlN single-crystal growth was reviewed.Attention was paid to four AlN crystal growth methods,which were direct nitridation of aluminum,solution growth,hydride vapor phase epitaxy (HVPE) growth,and physical vapor transport (PVT) growth.The technological process of each method is summarized and discussed,with a conclusion that the HVPE and PVT methods may be the most promising methods.Some improvements in the PVT growth technology made by our research team were presented.It is believed that,in order to grow large-size AlN single-crystal,further research should focus on precisely controlling the growth conditions,finding suitable inert crucible materials,finding best technical approach and process sequence,and preparing high-quality native AlN seed.

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备注/Memo

备注/Memo:
收稿日期:2010-04-06;修回日期:2010-08-10
基金项目:国家重点基础研究发展计划资助项目(2010CB635115);国家自然科学基金资助项目(60576005)
作者简介:郑瑞生(1957-),男(汉族),内蒙古自治区乌兰察布市人,深圳大学教授、博士生导师.E-mail:rszheng@szu.edu.cn
更新日期/Last Update: 2010-11-09