高纯锗多晶材料区熔速度优化的数值模拟

1)深圳大学物理与能源学院,广东深圳,518060; 2)中国科学院高能物理研究所,北京100049; 3)东莞中子科学中心,广东东莞 523803

半导体; 高纯锗制备; 高纯锗探测器; 区熔提纯; 杂质浓度; 数值模拟; 参数优化

Numerical simulation on optimization of zone melting speed of high-purity germanium polycrystalline materials
Hao Xin1, Sun Huibin1, Zhao Haige1, Hu Shipeng1, Luo Qi1, Tan Zhixin2,3, and Bai Erjun1

1)College of Physics and Energy, Shenzhen University, Shenzhen 518060, Guangdong Province, P.R.China 2)Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P.R.China 3)Dongguan Neutron Science Center, Dongguan 523803, Guangdong Province, P.R.China

semiconductor; high-purity germanium preparation; high-purity germanium detector; zone refining; impurity concentration; numerical simulation; parameter optimization

DOI: 10.3724/SP.J.1249.2016.03248

备注

为提高探测器级高纯锗多晶材料的制备效率,开展对锗材料多次区熔过程的参数优化的数值模拟. 利用分凝原理对高纯锗多晶材料制备的区熔过程进行数值模拟,针对杂质分凝系数小于1的情况,比较了不同区熔速度下,单次和多次区熔的提纯效果. 结果表明,虽然速度越慢单次区熔效果越好,但对多次区熔的累计效果要采用相对快速多次的方法,以实现相同提纯效果下总时间最短,即多次累计的区熔效率最高. 给出了区熔速度的优化方法,以指导实验提高区熔效率.

In order to improve the high-purity germanium(HPGe)preparation efficiency, numerical simulation on parameters optimization for multiple zone melting process of germanium materials is carried out. By using the principle of segregation, the zone melting process of polycrystalline materials is simulated numerically. For the segregation coefficient of less than 1, the refining effects of both single and multiple zone melting processes at different zone melting speeds are studied comparatively. Results show that the slower the zone speed, the better the refining effect of single zone melting. However, the cumulative refining effect of multiple zone melting should be investigated in a relatively fast and multi-pass way. It thus achieves the same effect with less total time, resulting in a higher cumulative efficiency. This paper provides a method to optimize the zone melting speed for guiding experiments and improving the refining efficiency.

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