深圳大学学报理工版

用传统常压固相烧结法,制备掺杂氧化镁的氧化锌陶瓷靶材,研究不同MgO含量及烧结温度对MgxZn1-xO陶瓷靶材的微观结构、力学性能、致密度和导电性能的影响.通过X射线衍射仪(X-ray diffraction,XRD)测定靶材相结构,扫描式电子显微镜(scanning electron microscope,SEM)观察靶材的断面形貌,万能实验机测量靶材的抗弯强度,维氏显微硬度仪测量靶材的维氏硬度,阿基米德排水法测量靶材密度,四探针法测量靶材导电性能,对MgxZn1-xO靶材的性能进行了表征,分析了MgxZn1-xO陶瓷靶材的烧结机理. 结果表明,MgxZn1-xO靶材的最佳烧结温度随着MgO含量的增加有所提高. MgO的掺杂比为x=0.12时,靶材的最佳烧结温度是1 450 ℃; 掺杂比为x=0.20时,靶材的最佳烧结温度约为1 500 ℃. 相同烧结温度下,随着MgO掺杂比的增加,靶材的致密性增大; 靶材抗弯强度先升后降,掺杂比为x=0.12时达到最大值,为94.56 MPa. 靶材硬度随着Mg含量的增加渐增,在1 450 ℃烧结,掺杂比为0时维氏硬度为152.000 N/mm2,掺杂比为x=0.40时维氏硬度为364.045 N/mm2.靶材的导电性随着MgO掺杂比的增加呈渐减趋势,掺杂比为0时,方块电阻为819.36 Ω; 掺杂比为x=0.40时,方块电阻增至30.00 MΩ.

MgxZn1-xO ceramic targets were prepared by using traditional solid-phase sintering method, and the effects of different MgO doping ratios and sintering temperatures on their microstructure, mechanical properties, density and electrical properties were studied. The MgxZn1-xO targets performance were characterized through specific analyses, including phase structure analysis by X-ray diffraction(XRD), fracture surface observation by scanning electron microscope(SEM), bending strength measurement by universal-testing machine, Vickers hardness measurement by micro Vickers tester, density measurement by Archimedes principle, and conductivity measurement by the four-probe method. Also, a preliminary understanding of the sintering mechanism of MgxZn1-xO targets was better understood on the basis of the characterization. The results show that the best sintering temperature increases with the increase of the MgO content x in MgxZn1-xO. The optimal sintering temperature is 1 450 ℃, at the doping ratio x=0.12, and the optimal sintering temperature is 1 500 ℃, at the doping ratio x=0.20. At the same sintering temperature, the density increases with the increase of MgO content, while the bending strength first increases and then decreases with the maximum bending strength being 94.56 MPa at the doping ratio x=0.12. The hardness always increases with the increase of MgO content: Vickers hardness reaches 152.000 N/mm2 without doping, and the hardness increases to 364.045 N/mm2 at the doping ratio x=0.40. The sheet conductivity gradually decreases with the increase of MgO doping ratio. The sheet resistance is 819.36 Ω when doping ratio is 0 and it increases to 30.00 MΩ when doping ratio x=0.40.

引言
1 实验
2 结果与分析
3 结论

图1 MgxZn1-xO陶瓷靶材试样的XRD衍射图谱<br/>Fig.1 (Color online)XRD for MgxZn1-xO ceramic targets

图1 MgxZn1-xO陶瓷靶材试样的XRD衍射图谱
Fig.1 (Color online)XRD for MgxZn1-xO ceramic targets

图2 各掺杂组分靶材收缩比与烧结温度的关系<br/>Fig.2 (Color online)Shrinkage ratio vs sintering tenperature under different doping ratios

图2 各掺杂组分靶材收缩比与烧结温度的关系
Fig.2 (Color online)Shrinkage ratio vs sintering tenperature under different doping ratios

图3 靶材相对密度与掺杂比的关系<br/>Fig.3 (Color online)Relative density vs doping ratio at different temperatures

图3 靶材相对密度与掺杂比的关系
Fig.3 (Color online)Relative density vs doping ratio at different temperatures

$图4 不同掺杂比时在1 450 ℃烧结的靶材断口形貌<br/>Fig.4 (Color online)SEM of the fracture surface at 1 450 ℃ under different doping ratios$

图4 不同掺杂比时在1 450 ℃烧结的靶材断口形貌
Fig.4 (Color online)SEM of the fracture surface at 1 450 ℃ under different doping ratios

图5 1 450 ℃时靶材抗弯强度与掺杂比的关系<br/>Fig.5 Bending strength vs doping ratio at 1 450 ℃

图5 1 450 ℃时靶材抗弯强度与掺杂比的关系
Fig.5 Bending strength vs doping ratio at 1 450 ℃

图6 1 450 ℃时靶材HV硬度与掺杂比的关系<br/>Fig.6 Vickers hardness vs doping ratio at 1 450 ℃

图6 1 450 ℃时靶材HV硬度与掺杂比的关系
Fig.6 Vickers hardness vs doping ratio at 1 450 ℃

图7 1 450 ℃时靶材方块电阻与掺杂比的关系<br/>Fig.7 Sheet resistance vs doping ratio at 1 450 ℃

图7 1 450 ℃时靶材方块电阻与掺杂比的关系
Fig.7 Sheet resistance vs doping ratio at 1 450 ℃

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引言

1 实验

2 结果与分析

3 结论

期刊信息

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引言

1 实 验

2 结果与分析

3 结 论

期刊信息

1 实验

3 结论